Abstract: In this letter, for the first time to our knowledge, high dc characteristics of AlGaN/GaN/silicon high-electron-mobility transistors transferred onto a thermally enhanced adhesive flexible tape are reported. Transmission line method (TLM) pattern supported on a flexible tape under 0.5% strain exhibits a high current density of 260 mA/mm. DC measurements performed on a representative gate-TLM device (LG = 2 μm) on a flexible tape are presented. Under 0.16 % strain, the device exhibits a maximum drain current of 300 mA/mm for a gate bias of 0 V and a drain bias of 3 V and withstands VDS = 18 V.
Abstract: We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimensions and position of each floating gate are well-defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.
Abstract: This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 μm and transferred onto a 125-μm-thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5-μm-thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that dc and RF performances are invariant even for ultimate thinning down to the buried oxide layer. Furthermore, n-MOSFET performance is improved by 1.5× compared with previous work, and the first demonstration of 100-GHz p-MOSFETs on an organic substrate is presented. Unity-current-gain cutoff and maximum oscillation frequencies as high as 150/160 GHz for n-MOSFETs and 100/130 GHz for p-MOSFETs on a plastic substrate have been measured, respectively.
Abstract: In this work, we report on the RF performance and noise characteristics of 65nm SOI-CMOS technology transferred onto plastic films. After transfer bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cut-off and maximum oscillation frequencies fT/fMAX amounting to 150/160GHz for n-type and 110/130GHz for p-type, respectively. Minimal noise figure and associated gain NFmin/Ga of 0.57dB/17.8dB and 0.57dB/17.0dB are measured at 10GHz for n- and p-MOSFETs, respectively.
Abstract: In this paper, high frequency (HF) noise performance of 65nm SOI n-MOSFETs, initially fabricated on rigid substrate and subsequently reported on flexible substrate (plastic), is presented for the first time. AC and noise performance is extracted from S-parameters measurements performed up to 110 GHz and noise measurements in 6-40 GHz frequency range, respectively. Almost no degradation has been observed between the S parameters measured on SOI rigid 65 nm transistors (referred as Rigid SOI-MOS) and the same thinned transistors transfer-bonded on a flexible substrate (referred to as Flex SOI-MOS). For Flex SOI-MOS, a minimum noise figure (NFmin) as low as 1.1 dB is achieved at 20 GHz, along with an associated gain (Ga) of 14.5 dB, when the transistor is biased at Vds=1.2V and Ids=270 mA/mm: so far, this performance constitutes the best reported one for flexible electronics.
