http://publicationslist.org/data/bouraoui.ilahi/atom.xml Bouraoui ILAHIhttp://publicationslist.org/bouraoui.ilahi$basepathfavicon.icoRecent additions to Bouraoui ILAHI's PublicationsList.org pagehttp://publicationslist.org/publications.png2009-10-02T10:52:07Z http://publicationslist.org/bouraoui.ilahi/refid2 2009-10-02T10:50:58Z

The effect of post-growth rapid thermal annealing on the photoluminescence properties of long wavelength low density InAs/GaAs (001) quantum dots (QDs) with well defined electronic shells has been investigated. For an annealing temperature of 650 degrees C for 30 s, the emission wavelength and the intersublevel spacing energies remain unchanged while the integrated PL intensity increases. For high...<br/><br/>Z Zaaboub, B Ilahi, L Sfaxi, H Maaref (2008) <i>MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS</i> <i></i> <i></i> 28: 5-6 1002-1005<br/>

http://publicationslist.org/bouraoui.ilahi/refid3 2009-10-02T10:50:58Z

In this work, low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) experiments have been carried out to investigate the optical and electronic properties of InAs/GaAs quantum dots (QDs) subjected to room-temperature proton implantation at various doses (5 x 10(10) - 10(14) ions cm(-2)) and subsequent thermal annealing. The energy shift of the main QD emission band is found...<br/><br/>Z Zaaboub, B Ilahi, L Sfaxi, H Maaref, B Salem, V Aimez, D Morris (2008) <i>NANOTECHNOLOGY</i> <i></i> <i></i> 19: 28 <br/>

http://publicationslist.org/bouraoui.ilahi/refid1 2009-10-02T10:50:58Z

This work reports on InAs/GaAs quantum dots (QDs) intermixing, induced by phosphorous ion implantation and subsequent rapid thermal annealing. The implantation process was carried out at room temperature at various doses (5 x 10(10)-10(14) ions/cm(2)), where the ions were accelerated at 50 keV. To promote the atomic intermixing, implanted samples are subjected to rapid thermal annealing at 675 deg...<br/><br/>Z Zaaboub, B Ilahi, L Sfaxi, H Maaref, B Salem, V Aimez, D Morris (2008) <i>PHYSICS LETTERS A</i> <i></i> <i></i> 372: 26 4714-4717<br/>

http://publicationslist.org/bouraoui.ilahi/refid4 2009-10-02T10:50:58Z

Strain-driven phase separation of InAs self-assembled quantum dot's InGaAs heterocapping alloy is investigated by temperature-dependent photoluminescence (PL) spectroscopy and tuned by rapid thermal annealing (RTA) as a means to control the optical properties of such a structure. The integrated PL intensity is found to exhibit an anomalous increase with increasing temperature up to 100 K. This beh...<br/><br/>B Ilahi, L Sfaxi, H Maaref (2007) <i>JOURNAL OF LUMINESCENCE</i> <i></i> <i></i> 127: 741-746<br/>

http://publicationslist.org/bouraoui.ilahi/refid7 2009-10-02T10:50:58Z

Vertically stacked multilayers of self-organized InAs/GaAs quantum dots (QDs) structures with different GaAs intermediate layer thicknesses varying between 2.8 and 17 nm are grown by solid source molecular beam epitaxy (SSMBE) and investigated by photoluminescence spectroscopy (PL). For 17 nm thick GaAs spacer, the PL spectra show two well separated features attributed to the formation of two QDs ...<br/><br/>B Ilahi, L Sfaxi, F Hassen, B Salem, G Bremond, O Marty, L Bouzaiene, H Maaref (2006) <i>MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS</i> <i></i> <i></i> 26: 2-3 374-377<br/>

http://publicationslist.org/bouraoui.ilahi/refid6 2009-10-02T10:50:58Z

Optical and morphological properties of solid source molecular beam epitaxy (MBE) grown InAs/GaAs quantum dots are investigated by photoluminescence spectroscopy (PL) and atomic force microscopy (AFM) as a function of the growth rate. The 10 K relatively high excitation density PL spectra of the investigated samples reveal the existence of multipeaks characterizing fundamental states and correspon...<br/><br/>B Ilahi, L Sfaxi, E Tranvouez, G Bremond, A Baira, C Bru-Chevalier, H Maaref (2006) <i>PHYSICS LETTERS A</i> <i></i> <i></i> 357: 4-5 360-363<br/>

http://publicationslist.org/bouraoui.ilahi/refid5 2009-10-02T10:50:58Z

Single InAs/GaAs quantum dots are studied using micro-photoluminescence spectroscopy. Single dot spectroscopy shows an antibinding biexciton. Some of these quantum dots are laterally coupled due to an anisotropic dot repartition. At low excitation power density, four excitons emissions are observed and are interpreted as the four possible exciton recombinations of two coupled quantum dots. (c) 200...<br/><br/>N Chauvin, M Baira, C Bru-Chevallier, B Ilahi, L Sfaxi, H Maaref (2006) <i>Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 11</i> <i></i> <i></i> 3: 11 3672-3675<br/>

http://publicationslist.org/bouraoui.ilahi/refid8 2009-10-02T10:50:58Z

The effect of rapid thermal annealing on InAs quantum dots (QDs) capped with In0.4Ga0.6As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of the PL emission peak has been observed for an annealing temperature (T-a) of 650 degrees C together with a pronounced improvement of the PL from the quantum well like heterocapping layer (QW). This behavior is attributed to th...<br/><br/>B Ilahi, L Sfaxi, G Bremond, H Maaref (2006) <i>MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS</i> <i></i> <i></i> 26: 5-7 971-974<br/>

http://publicationslist.org/bouraoui.ilahi/refid9 2009-10-02T10:50:58Z

Proton implantation followed by rapid thermal annealing (RTA) has been employed for the post-growth tuning of the band gap of molecular beam epitaxy grown InAs/GaAs quantum dots (QDs). To enhance QD intermixing, point defects are created by proton implantation at different doses (5 x 10(10)-10(14) cm(-2)) followed by rapid thermal annealing at 675 degrees C for 30 s. Low-temperature photoluminesce...<br/><br/>B Ilahi, B Salem, V Aimez, L Sfaxi, H Maaref, D Morris (2006) <i>NANOTECHNOLOGY</i> <i></i> <i></i> 17: 15 3707-3709<br/>

http://publicationslist.org/bouraoui.ilahi/refid11 2009-10-02T10:50:58Z

Room temperature 1.3 mu m emitting InAs quantum dots (QDs) covered by an In0.4Ga0.6As/GaAs strain reducing layer (SRL) have been fabricated by solid source molecular beam epitaxy (SSMBE) using the Stranski-Krastanov growth mode. The sample used has been investigated by temperature and excitation power dependent photoluminescence (PL), photoluminescence excitation (PLE), and time resolved photolumi...<br/><br/>B Ilahi, L Sfaxi, F Hassen, H Maaref, B Salem, G Guillot, A Jbeli, X Marie (2005) <i>APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING</i> <i></i> <i></i> 81: 4 813-816<br/>

http://publicationslist.org/bouraoui.ilahi/refid12 2009-10-02T10:50:58Z

Vertically stacked self-assembled InAs/GaAs quantum dots (QDs) structures with different GaAs spacer layer thicknesses are investigated by photoluminescence spectroscopy (PL). For correlated structures, the PL full widths at half maximum (FWHM) is found to go throw a minimum and the PL intensity throw a maximum for a spacer layer thickness around 8.5 nm. The effect of post growth rapid thermal ann...<br/><br/>B Ilahi, L Sfaxi, G Bremond, M Hjiri, H Maaref (2005) <i>Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4</i> <i></i> <i></i> 2: 4 1325-1330<br/>

http://publicationslist.org/bouraoui.ilahi/refid10 2009-10-02T10:50:58Z

1.3 mu m room temperature emitting multiple-stacked InAs/ GaAs( 001) quantum dots (QDs) are grown by molecular beam epitaxy ( MBE) and investigated by photoluminescence (PL), polarized photoluminescence (PPL), photoluminescence excitation (PLE), time resolved photoluminescence ( TRPL) and atomic force microscopy AFM. The PL measurement shows that two distinct sets of QDs coexist in the sample. The...<br/><br/>B Ilahi, L Sfaxi, G Bremond, M Senes, X Marie, H Maaref (2005) <i>EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS</i> <i></i> <i></i> 30: 2 101-105<br/>

http://publicationslist.org/bouraoui.ilahi/refid15 2009-10-02T10:50:58Z

A molecular beam epitaxy (MBE) grown vertically stacked InAs/GaAs(001) quantum dots (QDs) structure emitting at 1.3 mum at room temperature has been investigated by photoluminescence (PL) experiment. The PL measurement has shown the coexistence of bimodal size distribution in the QD ensemble. Furthermore, the large size QDs are found to exhibit an interlayer vertical coupling in addition to a late...<br/><br/>B Ilahi, L Sfaxi, H Maaref, G Bremond, G Guillot (2004) <i>SUPERLATTICES AND MICROSTRUCTURES</i> <i></i> <i></i> 36: 1-3 55-61<br/>

http://publicationslist.org/bouraoui.ilahi/refid14 2009-10-02T10:50:58Z

We report on the electronic coupling effect on carrier dynamics in InAs/GaAs vertically stacked quantum dot (QD) layers. For this purpose, both pico-second and continuous-wave excitation techniques have been used. We show that for large numbers of QD deposition cycles (greater than or equal to10 planes), lateral coupling effects between the neighbouring QDs of the same InAs layer influence remarka...<br/><br/>M Hjiri, L Sfaxi, F Hassen, B Ilahi, H Maaref, M Senes, X Marie, T Amand (2004) <i>SUPERLATTICES AND MICROSTRUCTURES</i> <i></i> <i></i> 36: 1-3 39-46<br/>

http://publicationslist.org/bouraoui.ilahi/refid13 2009-10-02T10:50:58Z

Coherent InAs islands separated by GaAs spacer (d) layers are shown to exhibit self-organized growth along the vertical direction. A vertically stacked layer structure is useful for controlling the size distribution of quantum dots. The thickness of the GaAs spacer has been varied to study its influence on the structural and optical properties. The structural and optical properties of multilayer I...<br/><br/>L Bouzaiene, B Ilahi, L Sfaxi, F Hassen, H Maaref, O Marty, J Dazord (2004) <i>APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING</i> <i></i> <i></i> 79: 3 587-591<br/>

http://publicationslist.org/bouraoui.ilahi/refid16 2009-10-02T10:50:58Z

Temperature dependence of the effective band gap (BG) energy of strained InxGa1-xAs/GaAs single-quantum well and multi-quantum well structures grown by solid source MBE at varied substrate temperature is investigated by photoluminescence spectroscopy between 10 K and room temperature. For low-temperature-grown heterostructure, the temperature-induced BG shrinkage exhibits a good correlation with t...<br/><br/>B Ilahi, L Sfaxi, L Bouzaiene, F Hassen, H Maaref (2003) <i>PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES</i> <i></i> <i></i> 17: 1-4 232-234<br/>

http://publicationslist.org/bouraoui.ilahi/refid17 2009-10-02T10:50:58Z

InAs/GaAs vertically stacked self-assembled quantum dot (QD) structures with different GaAs spacer layer thicknesses are grown by solid source molecular beam epitaxy (SSMBE) and investigated by transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. An increase in the polarization anisotropy is observed when the spacer layer thickness decreases. For a 10 monolayer (ML) thic...<br/><br/>B Ilahi, L Sfaxi, F Hassen, L Bouzaiene, H Maaref, B Salem, G Bremond, O Marty (2003) <i>PHYSICA STATUS SOLIDI A-APPLIED RESEARCH</i> <i></i> <i></i> 199: 3 457-463<br/>