http://publicationslist.org/data/fei.ding/atom.xml Fei Dinghttp://publicationslist.org/fei.ding$basepathfavicon.icoRecent additions to Fei Ding's PublicationsList.org pagehttp://publicationslist.org/publications.png2011-05-23T14:17:48Z http://publicationslist.org/fei.ding/refid1 2011-05-23T14:16:50Z

We study the effect of elastic anisotropic biaxial strain, induced by a piezoelectric actuator, on the light emitted by neutral excitons confined in different kinds of epitaxial quantum dots. We find that the light polarization rotates by up to similar to 80 degrees and the fine structure splitting (FSS) varies nonmonotonically by several tens of mu eV as the strain is varied. These findings provi...<br/><br/>J D Plumhof, V Krapek, F Ding, K D Jons, R Hafenbrak, P Klenovsky, A Herklotz, K Dorr, P Michler, A Rastelli, O G Schmidt (2011) <i>PHYSICAL REVIEW B</i> <i></i> <i></i> 83: 12 <br/>

http://publicationslist.org/fei.ding/refid5 2011-05-23T14:16:50Z

We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots placed onto piezoelectric actuators. With increasing compression, the emission blueshifts and the binding energies of the positive trion (X+) and biexciton (XX) relative to the neutral exciton (X) show a monotonic increase. This phenomenon is mainly ascribed to changes in electron and ho...<br/><br/>F Ding, R Singh, J D Plumhof, T Zander, V Krapek, Y H Chen, M Benyoucef, V Zwiller, K Dorr, G Bester, A Rastelli, O G Schmidt (2010) <i>PHYSICAL REVIEW LETTERS</i> <i></i> <i></i> 104: 6 <br/>

http://publicationslist.org/fei.ding/refid4 2011-05-23T14:16:50Z

Microtubular optical microcavities from rolled-up ring resonators with subwavelength wall thicknesses have been fabricated by releasing prestressed SiO/SiO2 bilayer nanomembranes from photoresist sacrificial layers. Whispering gallery modes are observed in the photoluminescence spectra from the rolled-up nanomembranes, and their spectral peak positions shift significantly when measurements are car...<br/><br/>G S Huang, V A B Quinones, F Ding, S Kiravittaya, Y F Mei, O G Schmidt (2010) <i>ACS NANO</i> <i></i> <i></i> 4: 6 3123-3130<br/>

http://publicationslist.org/fei.ding/refid3 2011-05-23T14:16:50Z

We report on a magnetophotoluminescence study of single self-assembled semiconductor nanorings which are fabricated by molecular-beam epitaxy combined with AsBr3 in situ etching. Oscillations in the neutral exciton radiative recombination energy and in the emission intensity are observed under an applied magnetic field. Further, we control the period of the oscillations with a gate potential that ...<br/><br/>F Ding, N Akopian, B Li, U Perinetti, A Govorov, F M Peeters, C C B Bufon, C Deneke, Y H Chen, A Rastelli, O G Schmidt, V Zwiller (2010) <i>PHYSICAL REVIEW B</i> <i></i> <i></i> 82: 7 <br/>

http://publicationslist.org/fei.ding/refid2 2011-05-23T14:16:50Z

Tunable biaxial stresses, both tensile and compressive, are applied to a single layer graphene by utilizing piezoelectric actuators. The Gruneisen parameters for the phonons responsible for the D, G, 2D and 2D' peaks are studied. The results show that the D peak is composed of two peaks, unambiguously revealing that the 2D peak frequency (omega(2D)) is not exactly twice that of the D peak (omega(D...<br/><br/>F Ding, H X Ji, Y H Chen, A Herklotz, K Dorr, Y F Mei, A Rastelli, O G Schmidt (2010) <i>NANO LETTERS</i> <i></i> <i></i> 10: 9 3453-3458<br/>

http://publicationslist.org/fei.ding/refid7 2011-05-23T14:16:50Z

Epitaxial self-assembled quantum dots (QDs) are commonly obtained by the Stranski-Krastanow (SK) growth mode, in which QDs form on top of a thin two-dimensional (2D) wetting layer (WL). In SK QDs, the properties of the WL such as thickness and composition are hard to control independently of those of the overlying QDs. We investigate here strain-free GaAs/AlGaAs QDs located under a GaAs quantum we...<br/><br/>L J Wang, V Krapek, F Ding, F Horton, A Schliwa, D Bimberg, A Rastelli, O G Schmidt (2009) <i>PHYSICAL REVIEW B</i> <i></i> <i></i> 80: 8 <br/>

http://publicationslist.org/fei.ding/refid6 2011-05-23T14:16:50Z

Arrays of GaAs microring optical resonators with embedded InGaAs quantum dots (QDs) are placed on top of Pb(Mg1/3Nb2/3)O-3-PbTiO3 piezoelectric actuators, which allow the microcavities to be reversibly "stretched" or "squeezed" by applying relatively large biaxial stresses at low temperatures. The emission energy of both QDs and optical modes red-or blue-shift depending on the strain sign, with th...<br/><br/>T Zander, A Herklotz, S Kiravittaya, M Benyoucef, F Ding, P Atkinson, S Kumar, J D Plumhof, K Dorr, A Rastelli, O G Schmidt (2009) <i>OPTICS EXPRESS</i> <i></i> <i></i> 17: 25 22452-22461<br/>

http://publicationslist.org/fei.ding/refid8 2011-05-23T14:16:50Z

Tubular optical microcavities have been fabricated by releasing prestressed SiO/SiO2 bilayer nanomembranes from polymer sacrificial layers, and their geometrical structure is well controlled by defining the shape of nanomembranes via photolithography. Optical measurements at room temperature demonstrate that resonant modes of microtubular cavities rolled up from circular shapes can be tuned in pea...<br/><br/>G S Huang, S Kiravittaya, V A B Quinones, F Ding, M Benyoucef, A Rastelli, Y F Mei, O G Schmidt (2009) <i>APPLIED PHYSICS LETTERS</i> <i></i> <i></i> 94: 14 <br/>

http://publicationslist.org/fei.ding/refid9 2011-05-23T14:16:50Z

We have studied the emission properties of single CdTe/ZnTe quantum dots (QDs) grown on Si(001) substrates by using molecular beam epitaxy and atomic layer epitaxy. The good quality of the QDs is attested by the resolution-limited emission, negligible background and absence of measurable spectral jitter or blinking. Power-dependent, polarization-dependent, and temperature-dependent microphotolumin...<br/><br/>H S Lee, A Rastelli, M Benyoucef, F Ding, T W Kim, H L Park, O G Schmidt (2009) <i>NANOTECHNOLOGY</i> <i></i> <i></i> 20: 7 <br/>

http://publicationslist.org/fei.ding/refid11 2011-05-23T14:16:50Z

We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot molecules (QDMs) embedded in a GaAs matrix and we discuss strategies to fully control their spatial configuration and electronic properties. The three-dimensional morphology of encapsulated QDMs was revealed by selective wet chemical etching of the GaAs top capping layer and subsequent imaging by ato...<br/><br/>L Wang, A Rastelli, S Kiravittaya, P Atkinson, F Ding, C C B Bufon, C Hermannstadter, M Witzany, G J Beirne, P Michler, O G Schmidt (2008) <i>NEW JOURNAL OF PHYSICS</i> <i></i> <i></i> 10: <br/>

http://publicationslist.org/fei.ding/refid12 2011-05-23T14:16:50Z

The properties of the wetting layer (WL) of InAs nanorings grown by droplet epitaxy have been studied. The heavy-hole (HH) and light-hole (LH) related transitions of the In(Ga)As WL were observed by reflectance difference spectroscopy. From the temperature dependent photoluminescence behavior of InAs rings, the channel for carriers to redistribute was found to be the compressed GaAs instead of the...<br/><br/>C Zhao, Y H Chen, B Xu, C G Tang, Z G Wang, F Ding (2008) <i>APPLIED PHYSICS LETTERS</i> <i></i> <i></i> 92: 6 <br/>

http://publicationslist.org/fei.ding/refid10 2011-05-23T14:16:50Z

We have developed a generic approach to engineer tubular micro-/nanostructures out of many different materials (see figure) with tunable diameters and lengths by precisely releasing and rolling up functional nanomembranes on polymers. The technology spans across different scientific fields ranging from photonics to biophysics and we demonstrate optical ring resonators, magneto-fluidic sensors, rem...<br/><br/>Y F Mei, G S Huang, A A Solovev, E B Urena, I Moench, F Ding, T Reindl, R K Y Fu, P K Chu, O G Schmidt (2008) <i>ADVANCED MATERIALS</i> <i></i> <i></i> 20: 21 4085-+<br/>

http://publicationslist.org/fei.ding/refid15 2011-05-23T14:16:50Z

The photoluminescence (PL) of Mn-implanted quantum dot (QD) samples after rapid annealing is studied. It is found that the blue shift of the PL peak of the QDs, introduced by the rapid annealing, decreases abnormally as the implantation dose increases. This anomaly is probably related to the migration of Mn atoms to the InAs QDs during annealing, which leads to strain relaxation when Mn atoms ente...<br/><br/>L J Hu, Y H Chen, X L Ye, X Q Huang, L Y Liang, F Ding, Z G Wang (2007) <i>PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES</i> <i></i> <i></i> 36: 2 221-225<br/>

http://publicationslist.org/fei.ding/refid14 2011-05-23T14:16:50Z

The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigated by combining atomic force microscopy and removal of the GaAs cap layer by selective wet etching. This method is used to investigate how the morphology of In(Ga)As quantum dots changes upon GaAs capping and subsequent in situ etching with AsBr3. A wave function calculation based on the experimental...<br/><br/>F Ding, L J Wang, S Kiravittaya, E Muller, A Rastelli, O G Schmidt (2007) <i>APPLIED PHYSICS LETTERS</i> <i></i> <i></i> 90: 17 <br/>

http://publicationslist.org/fei.ding/refid13 2011-05-23T14:16:50Z

This paper focuses on the study of carrier channels of multimodal-sized quantum dots formed on patterned substrate by a rate-equation-based model. Surface-mediated indium adatom migration is revealed by a direct comparison between quantum dot wetting layer, which acts as carrier channel, formed on a flat substrate and on a patterned substrate. For the assessment of suitability, the carrier channel...<br/><br/>F Ding, Y H Chen, C G Tang, B Xu, Z G Wang (2007) <i>PHYSICAL REVIEW B</i> <i></i> <i></i> 76: 12 <br/>

http://publicationslist.org/fei.ding/refid16 2011-05-23T14:16:50Z

We grow InGaAs quantum dot (QD) at low growth rate with 70 times insertion of growth interruption in MBE system. It is found that because of the extreme growth condition, QDs exhibit a thick wetting layer, large QD height value and special surface morphology which is attributed to the enhanced adatom surface diffusion and In-segregation effect. Temperature dependence of photoluminescence measureme...<br/><br/>L K Yu, B Xu, Z G Wang, Y H Chen, P Jin, C Zhao, J Sun, F Ding, L J Hu (2006) <i>PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES</i> <i></i> <i></i> 33: 1 207-210<br/>