Jocelyn Achard's Publications List

Alternative solutions to caesium in negative-ion sources : a study of negative-ion surface production on diamond in H 2 /D 2 plasmas

2017-09-02T06:00:16Z

This paper deals with a study of H − /D − negative ion surface production on diamond in low pressure H 2 /D 2 plasmas. A sample placed in the plasma is negatively biased with respect to plasma potential. Upon positive ion impacts on the sample, some negative ions are formed and detected according to their mass and energy by a mass spectrometer placed in front of the sample. The experimental me...

Cartry Gilles, Kogut Dmitry, Achkasov Kostiantyn, Layet Jean-Marc, Farley Thomas, Gicquel Alix, Achard Jocelyn, Brinza Ovidiu, Bieber Thomas, Khemliche Hocine, Roncin Philippe, Simonin Alain (2017) New Journal of Physics http://stacks.iop.org/1367-2630/19/i=2/a=025010 19: 2

Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole

2017-09-02T06:00:16Z

Alexandre Tallaire, Ovidiu Brinza, Vianney Mille, Ludovic William, Jocelyn Achard (2017) Advanced Materials http://dx.doi.org/10.1002/adma.201604823 29:

Nanocrystalline diamond films grown at very low substrate temperature using a distributed antenna array microwave process : Towards polymeric substrate coating

2017-09-02T06:00:16Z

The growth of NanoCrystalline Diamond (NCD) films at very low substrate temperature on large area surface using a distributed antenna array (DAA) microwave reactor operating in H2/CH4/CO2 gas mixture is investigated. The estimated activation energy is in the range 1.3–3.2 kcal·mol− 1 depending on the injected microwave power and resulting substrate temperature range, which is comparable to va...

B Baudrillart, F Bénédic, Th Chauveau, A Bartholomot, J Achard (2017) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963516306604 75: 44-51

Thick CVD diamond films grown on high-quality type IIa HPHT diamond substrates from New Diamond Technology

2017-09-02T06:00:16Z

The suitability of type IIa diamonds prepared by High Pressure High Temperature (HPHT) in cubic presses at New Diamond Technology was assessed as substrates for the growth of thick detector-grade quality Chemically Vapour Deposited (CVD) diamond films. The substrates were found to possess a moderate dislocation density of about 103 cm− 2 and a reduced amount of residual impurities as compared to...

A Tallaire, V Mille, O Brinza, Thu Nhi Tran Thi, J M Brom, Y Loguinov, A Katrusha, A Koliadin, J Achard (2017) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S092596351730287X 77: 146-152

Picosecond dynamics of free and bound excitons in doped diamond

2017-09-02T06:00:16Z

J Barjon, P Valvin, C Brimont, P Lefebvre, O Brinza, A Tallaire, J Achard, F Jomard, M A Pinault-Thaury (2016) Physical Review B http://link.aps.org/doi/10.1103/PhysRevB.93.115202 93: 11

Identification of Dislocations in Synthetic Chemically Vapor Deposited Diamond Single Crystals

2017-09-02T06:01:24Z

High purity chemically vapor deposited (CVD) diamond single crystals are now widely available. However, the reduction of dislocations in this material still remains an important challenge that will strongly condition its adoption in areas such as optics, electronics, and spintronics, where these defects have a disastrous effect on the properties. In this work we report on a methodology that allows...

Alexandre Tallaire, Thierry Ouisse, Arthur Lantreibecq, Robin Cours, Marc Legros, Hakima Bensalah, Julien Barjon, Vianney Mille, Ovidiu Brinza, Jocelyn Achard (2016) Crystal Growth & Design http://dx.doi.org/10.1021/acs.cgd.6b00053 16: 2741-2746

Mosaicity, dislocations and strain in heteroepitaxial diamond grown on iridium

2017-09-02T06:00:16Z

The present study provides a multi-scale investigation of the crystalline quality and the structural defects present in heteroepitaxial diamond films grown on iridium/SrTiO3 (001) substrates by microwave plasma assisted chemical vapor deposition. X-ray diffraction, Raman spectroscopy and low temperature cathodoluminescence are combined to accurately characterize the mosaicity, the density of dislo...

H Bensalah, I Stenger, G Sakr, J Barjon, R Bachelet, A Tallaire, J Achard, N Vaissiere, K H Lee, S Saada, J C Arnault (2016) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963516301054 66: 188-195

Low-temperature deposition of nanocrystalline diamond films on silicon nitride substrates using distributed antenna array PECVD system

2017-09-02T06:00:16Z

The growth of nanocrystalline diamond (NCD) films on Si3N4 ceramic substrates at low surface temperature using a distributed antenna array plasma-enhanced chemical vapor deposition (PECVD) process is investigated. The advantage of the considered deposition process for keeping a low growth temperature is demonstrated through microwave electric field simulation and comparisons with microwave cavity ...

Benoît Baudrillart, Fabien Bénédic, Amel S Melouani, Filipe J Oliveira, Rui F Silva, Jocelyn Achard (2016) Physica Status Solidi (a) http://dx.doi.org/10.1002/pssa.201600221 213:

Growth of thick and heavily boron-doped (113)-oriented CVD diamond films

2017-09-02T06:00:16Z

Diamond as a wide band-gap semiconductor exhibits unrivalled figures of merit for power electronics. However this application has been held back by the poor availability of thick large-area electrically-conductive diamond material that is a prerequisite for developing elemental devices. Efforts have been devoted to optimizing CVD growth and doping on conventional (100) and more rarely (111) crysta...

A Tallaire, A Valentin, V Mille, L William, M A Pinault-Thaury, F Jomard, J Barjon, J Achard (2016) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963516300929 66: 61-66

Epitaxy of iridium on SrTiO3/Si (001) : A promising scalable substrate for diamond heteroepitaxy

2017-09-02T06:00:16Z

Iridium epitaxy on SrTiO3/Si (001) was investigated using field emission scanning electron microscopy (FE-SEM), spectroscopic ellipsometry, X-ray diffraction (XRD) and atomic force microscopy (AFM). Thermal stability of SrTiO3 buffer layers (12–40 nm thick) was first investigated by annealing at different temperatures (620 °C–920 °C) under vacuum to optimize iridium epitaxy conditions. The s...

Kee Han Lee, Samuel Saada, Jean-Charles Arnault, Rahma Moalla, Guillaume Saint-Girons, Romain Bachelet, Hakima Bensalah, Ingrid Stenger, Julien Barjon, Alexandre Tallaire, Jocelyn Achard (2016) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963516300905 66: 67-76

Reduction of dislocation densities in single crystal CVD diamond by using self-assembled metallic masks

2015-07-14T16:37:37Z

The development of diamond-based electronic devices designed to operate at high power is strongly hampered by the lack of low dislocation single crystal material. Dislocations in Chemically Vapor Deposited (CVD) diamond are indeed generally responsible for leakage current, seriously deteriorating the performance of the devices. They can be due to defects such as polishing damage or contamination f...

M Naamoun, A Tallaire, P Doppelt, A Gicquel, M Legros, J Barjon, J Achard (2015) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S092596351500117X 58: 62-68

Preferential orientation of NV defects in CVD diamond films grown on (113)-oriented substrates

2015-07-14T16:37:37Z

Thick CVD diamond layers were successfully grown on (113)-oriented substrates. They exhibited smooth surface morphologies and a crystalline quality comparable to (100) electronic grade material, and much better than (111)-grown layers. High growth rates (15–50 μm/h) were obtained while nitrogen doping could be achieved in a fairly wide range without seriously imparting crystalline quality. Elec...

M Lesik, T Plays, A Tallaire, J Achard, O Brinza, L William, M Chipaux, L Toraille, T Debuisschert, A Gicquel, J F Roch, V Jacques (2015) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963515000904 56: 47-53

Temperature dependent creation of nitrogen-vacancy centers in single crystal CVD diamond layers

2015-07-14T16:37:37Z

In this work, we explore the ability of plasma assisted chemical vapor deposition (PACVD) operating under high power densities to produce thin high-quality diamond layers with a controlled doping with negatively-charged nitrogen-vacancy (NV-) centers. This luminescent defect possesses specific physical characteristics that make it suitable as an addressable solid-state electron spin for measuring ...

A Tallaire, M Lesik, V Jacques, S Pezzagna, V Mille, O Brinza, J Meijer, B Abel, J F Roch, A Gicquel, J Achard (2015) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S092596351400226X 51: 55-60

Magnetic imaging with an ensemble of nitrogen-vacancy centers in diamond

2016-10-13T15:35:30Z

Mayeul Chipaux, Alexandre Tallaire, Jocelyn Achard, Sébastien Pezzagna, Jan Meijer, Vincent Jacques, Jean-François Roch, Thierry Debuisschert (2015) The European Physical Journal D http://dx.doi.org/10.1140/epjd/e2015-60080-1 69: 7 1-10

Microstructure and growth kinetics of nanocrystalline diamond films deposited in large area/low temperature distributed antenna array microwave-plasma reactor

2016-10-13T15:36:01Z

In this paper, we investigate a new distributed antenna array PECVD system, with 16 microwave plasma sources arranged in a 2D matrix, which enables the growth of 4-inch diamond films using H2/CH4/CO2 gas mixture at low gas pressure, typically below 0.45 mbar, and at substrate temperature of 400 °C. The influence of substrate position with respect to elementary microwave sources is investigate...

Benoît Baudrillart, Fabien Bénédic, Ovidiu Brinza, Thomas Bieber, Thierry Chauveau, Jocelyn Achard, Alix Gicquel (2015) physica status solidi (a) http://dx.doi.org/10.1002/pssa.201532276 212: 2611–2615

Polarization effect on time-of-flight measurements performed on a CVD diamond single crystal

2016-10-13T15:35:09Z

Time-of-flight experiments have been performed on a freestanding CVD diamond sample with Ti–Au contacts. Electron–hole pairs are generated with alpha rays from an 241Am source. A low-field mobility of 2972 cm2/Vs and a saturation velocity of 12.3 × 106 cm/s have been extracted from the hole current pulses. However, the obtained electrons pulse shapes do not allow a clear determination...

Audrey Valentin, André Tardieu, Vianney Mille, Alexandre Tallaire, Jocelyn Achard, Alix Gicquel (2015) physica status solidi (a) http://dx.doi.org/10.1002/pssa.201532205 212: 2636–2640

Photonic nano-structures on (111) oriented diamond

2014-04-29T17:21:21Z

Elke Neu, Patrick Appel, Marc Ganzhorn, Javier Miguel-Sanchez, Margarita Lesik, Vianney Mille, Vincent Jacques, Alexandre Tallaire, Jocelyn Achard, Patrick Maletinsky (2014) Applied Physics Letter 104: 153108

Optical study of defects in thick undoped CVD synthetic diamond layers

2014-04-29T17:23:23Z

The growth of thick single crystal synthetic diamonds by plasma-assisted chemical vapour deposition (PACVD) that are colourless and with a low impurities content is an important challenge to achieve gem-quality material. To this aim, advanced optical imaging and spectroscopy techniques are useful tools to optimize the growth process as well as to identify CVD-made diamond gems. In this paper, two ...

Bert Willems, Alexandre Tallaire, Jocelyn Achard (2014) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963513001957 41: 25-33

High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates

2013-12-07T15:41:33Z

The development of diamond power electronic devices based on p–n junctions strongly relies on the ability to achieve efficient n-type doping which has so far been the limiting step. (111)-oriented diamond films offer the advantage of a higher activity and incorporation of dopants. In this respect, growing high-quality films by Plasma Assisted Chemical Vapour Deposition (PACVD) on this orientatio...

A Tallaire, J Achard, A Boussadi, O Brinza, A Gicquel, I N Kupriyanov, Y N Palyanov, G Sakr, J Barjon (2014) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963513002124 41: 34-40

Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

2014-03-19T06:11:54Z

M Lesik, J.-P. Tetienne, A Tallaire, J Achard, V Mille, A Gicquel, J.-F. Roch, V Jacques (2014) Applied Physics Letters http://scitation.aip.org/content/aip/journal/apl/104/11/10.1063/1.4869103 104: 113107

Low temperature and large area deposition of nanocrystalline diamond films with distributed antenna array microwave-plasma reactor

2014-09-07T08:23:46Z

Diamond films grown at low temperature (< 400 °C) on large area of different substrates can open new applications based on the thermal, electrical and mechanical properties of diamond. In this paper, we present a new distributed antenna array PECVD system, with 16 microwave plasma sources arranged in a 2D matrix, which enables the growth of 4-inch nanocrystalline diamond films (NCD) at substra...

H A Mehedi, J Achard, D Rats, O Brinza, A Tallaire, V Mille, F Silva, Ch Provent, A Gicquel (2014) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963514001150 47: 58-65

Birefringence Microscopy of Unit Dislocations in Diamond

2015-07-14T16:37:37Z

We use the rotating polarizer birefringence technique to investigate the properties of dislocations in single crystalline diamond produced by a high pressure high temperature (HPHT) process or by microwave plasma assisted chemical vapor deposition (MPACVD). The birefringence pattern of individual dislocations is measured and modeled. Although the combination of experiment and simulation does not p...

Le Thi Mai Hoa, T Ouisse, D Chaussende, M Naamoun, A Tallaire, J Achard (2014) Crystal Growth & Design http://dx.doi.org/10.1021/cg5010193 14: 11 5761-5766

3.10 - Ultrafast Deposition of Diamond by Plasma-Enhanced CVD A2 - Sarin, Vinod K

2016-10-13T15:46:50Z

Abstract The answer to the question "how can we deposit diamond of very high purity/high quality at ultrahigh growth rate by chemical vapor deposition" can be expressed in very simple words: just produce as much as possible hydrogen atoms in a very clean system, and prevent their loss until they get to the growing surface! To that, we will add "manage" carefully hydrocarbon injection into the reac...

Alix Gicquel, François Silva, Catherine Rond, Nadira Derkaoui, Ovidiu Brinza, Jocelyn Achard, Guillaume Lombardi, Alexandre Tallaire, Armelle Michau, Maxime Wartel, Khaled Hassouni (2014) Comprehensive hard materials http://www.sciencedirect.com/science/article/pii/B9780080965277000477 : 217-268

Passive charge state control of nitrogen-vacancy centres in diamond using phosphorous and boron doping

2014-11-11T17:24:52Z

The control and stabilisation of the charge state of nitrogen-vacancy centres in diamond is an important issue for the achievement of reliable processing of spin-based quantum information. The effect of phosphorous and boron doping of diamond on the charge state of nitrogen-vacancy (NV) centres is shown here. Ensembles of NV centres are produced at a depth of 60 nm in ultrapure diamond by implan...

Karin Groot-Berning, Nicole Raatz, Inga Dobrinets, Margarita Lesik, Piernicola Spinicelli, Alexandre Tallaire, Jocelyn Achard, Vincent Jacques, Jean-François Roch, Alexander M Zaitsev, Jan Meijer, Sébastien Pezzagna (2014) Physica Status Solidi (a) http://dx.doi.org/10.1002/pssa.201431308 211: 10 2268-2273

Improvement of dislocation density in thick CVD single crystal diamond films by coupling H2/O2 plasma etching and chemo-mechanical or ICP treatment of HPHT substrates

2015-07-14T16:39:41Z

H2/O2 plasma treatments offer advantages over other etching processes of diamond as a technique to prepare the substrate's surface prior to homoepitaxial CVD diamond growth particularly in the case of thick films. It allows removing surface defects induced by polishing, thus leading to an improved morphology and limiting the stress within the grown crystal. Nevertheless, this treatment induces sur...

J Achard, A Tallaire, V Mille, M Naamoun, O Brinza, A Boussadi, L William, A Gicquel (2014) Physica Status Solidi (a) http://dx.doi.org/10.1002/pssa.201431181 211: 2264–2267

Effect of the process parameters of inductively coupled plasma reactive ion etching on the fabrication of diamond nanotips

2014-11-11T17:24:52Z

The effect of the basic process parameters of the inductively coupled plasma reactive ion etching (ICP-RIE) on the fabrication of diamond nanotips using a gas mixture of oxygen (O2) and trifluoromethane (CHF3) is reported. Aim of this study was to obtain an optimal etch recipe for the fabrication of well-oriented and high aspect-ratio nanotips out of diamond single crystals. The investigated param...

Hasan-al Mehedi, Vianney Mille, Jocelyn Achard, Ovidiu Brinza, Alix Gicquel (2014) physica status solidi (a) http://dx.doi.org/10.1002/pssa.201431258 211: 10 2343-2346

Influence of surface misorientation of HPHT diamond substrates on crystal morphologies and threading dislocations propagation

2013-11-01T09:26:46Z

The production of diamond-based electronic devices for optical and electronic applications requires the control of point and extended defects that influence the exceptional properties of the material. While point defects in single crystal (Chemical Vapor Deposition) diamond have been studied for many years, relatively little has been reported on the extended defects content of this material. In pa...

M Naamoun, A Tallaire, J Achard, F Silva, L William, P Doppelt, A Gicquel (2013) Physica Status Solidi (a) http://dx.doi.org/10.1002/pssa.201300071 210: 10 1985-1990

X-ray micro beam analysis of the photoresponse of an enlarged CVD diamond single crystal

2013-03-16T16:39:31Z

Diamond is one of the most promising materials for developing innovative electronic devices. Chemical vapour deposition (CVD) homoepitaxial growth allows the synthesis of high quality single crystal diamond plates. However, the use of these crystals for electronic applications is hampered by their small area (typically of the order of 10 mm2). Large areas are desired to ensure efficient particle o...

A De Sio, M Di Fraia, M Antonelli, R H Menk, G Cautero, S Carrato, L Tozzetti, J Achard, A Tallaire, R S Sussmann, E Pace (2013) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963513000216 34: 36-40

Growth strategy for controlling dislocation densities and crystal morphologies of single crystal diamond by using pyramidal-shape substrates

2013-03-04T07:43:52Z

The growth of millimetre-thick diamond single crystals by plasma assisted CVD is complicated by the formation of unepitaxial defects, particularly at the edges of the crystal. These defects tend to encroach on the top surface hence limiting the maximum thickness to typically a few hundreds of micrometres. Dislocations are another type of defects that are also particularly formed at the edges of th...

Alexandre Tallaire, Jocelyn Achard, Ovidiu Brinza, Vianney Mille, Mehdi Naamoun, François Silva, Alix Gicquel (2013) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963513000162 33: 71-77

Growth of large size diamond single crystals by plasma assisted chemical vapour deposition : Recent achievements and remaining challenges

2013-03-16T16:39:15Z

Diamond is a material with outstanding properties making it particularly suited for high added-value applications such as optical windows, power electronics, radiation detection, quantum information, bio-sensing and many others. Tremendous progresses in its synthesis by microwave plasma assisted chemical vapour deposition have allowed obtaining single crystal optical-grade material with thicknesse...

Alexandre Tallaire, Jocelyn Achard, François Silva, Ovidiu Brinza, Alix Gicquel (2013) Comptes Rendus Physique http://www.sciencedirect.com/science/article/pii/S1631070512001429 14: 169-184

Grafting polymer–protein bioconjugate to boron-doped diamond using aryl diazonium coupling agents

2013-12-07T15:41:47Z

Highly boron doped diamond (BDD) surface was grafted with 4-benzoylphenyl (BP), a photopolymerization initiator group, to provide a platform for surface-confined radical photopolymerization of 2-hydroxyethyl methacrylate (HEMA). The PHEMA-modified BDD hybrid (BDD-PHEMA) resisted non-specific adsorption while the imidazole-functionalized PHEMA graft readily reacted with BSA to provide a bioactive B...

Zakaria Salmi, Aazdine Lamouri, Philippe Decorse, Mohamed Jouini, Amine Boussadi, Jocelyn Achard, Alix Gicquel, Samia Mahouche-Chergui, Benjamin Carbonnier, Mohamed M Chehimi (2013) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963513002033 40: 60-68

Optical study of defects in thick undoped CVD synthetic diamond layers

2013-11-01T09:26:46Z

The growth of thick single crystal synthetic diamonds by plasma-assisted chemical vapour deposition (PACVD) that are colourless and with a low impurities content is an important challenge to achieve gem-quality material. To this aim, advanced optical imaging and spectroscopy techniques are useful tools to optimize the growth process as well as to identify CVD-made diamond gems. In this paper, two ...

Bert Willems, Alexandre Tallaire, Jocelyn Achard (2013) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963513001957 http://dx.doi.org/10.1016/j.diamond.2013.09.010: 0

X-Ray Beam Position Monitor Based on a Single Crystal Diamond Performing Bunch by Bunch Detection

2013-11-19T14:22:06Z

Diamond is a promising material for the production of semitransparent in situ photon beam monitors which can withstand the high dose rates occurring in new generation synchrotron radiation storage rings and in free electron lasers. We report on the development of a 500 μm thick freestanding, single crystal chemical vapor deposited diamond detector with segmented electrodes. Performances in both l...

M Di Fraia, M Antonelli, A Tallaire, J Achard, S Carrato, R H Menk, G Cautero, D Giuressi, W H Jark, F D ' Acapito, A De Sio, E Pace (2013) Journal of Physics : Conference Series http://stacks.iop.org/1742-6596/425/i=21/a=212001 425: 21

Determination of exciton diffusion lengths in isotopically engineered diamond junctions

2012-07-19T13:47:02Z

J Barjon, F Jomard, A Tallaire, J Achard, F Silva (2012) Applied Physics Letters http://link.aip.org/link/?APL/100/122107/1 100: 122107

Freestanding CVD boron doped diamond single crystals : A substrate for vertical power electronic devices?

2013-01-06T18:38:09Z

The development of ‘all-diamond’ devices for power electronics is attracting more and more interest as judged by the recent increase in the number of publications on the subject. Nevertheless most devices reported in the literature used coplanar or pseudo-vertical geometries which, although promising in term of breakdown voltage, have still a relatively high on-state resistance. This could be ...

J Achard, R Issaoui, A Tallaire, F Silva, J Barjon, F Jomard, A Gicquel (2012) physica status solidi (a) http://dx.doi.org/10.1002/pssa.201200045 209: 1651-1658

Etch-pit formation mechanism induced on HPHT and CVD diamond single crystals by H2/O2 plasma etching treatment

2013-01-06T18:42:46Z

H2/O2 plasma treatments offer advantages over other etching processes of diamond as a technique to prepare the substrate surface prior to chemical vapor deposition (CVD) diamond growth. It allows removing defects induced on the surface by polishing, thus leading to an improved morphology and limiting the stress within the grown crystal. Moreover, they present the advantage to be performed in situ ...

M Naamoun, A Tallaire, F Silva, J Achard, P Doppelt, A Gicquel (2012) physica status solidi (a) http://dx.doi.org/10.1002/pssa.201200069 209: 1715-1720

An assessment of contact metallization for high power and high temperature diamond Schottky devices

2012-07-20T11:50:22Z

Different metals W, Al, Ni and Cr were evaluated as Schottky contacts on the same p-type lightly boron doped homoepitaxial diamond layer. The current–voltage (I–V) characteristics, the series resistance and the thermal stability are discussed in the range of RT to 625 K for all Schottky devices. High current densities close to 3.2 kA/cm2 are displayed and as the series resistance dec...

S Koné, H Schneider, K Isoird, F Thion, J Achard, R Issaoui, S Msolli, J Alexis (2012) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S092596351200132X 27–28: 23-28

Cathodoluminescence and Photoluminescence of NV Centers

2014-03-29T15:47:02Z

David Roy-Guay, Michel Pioro-Ladrière, Denis Morris, Alexandre Tallaire, Jocelyn Achard, Dominique Drouin (2012) International Journal of Nanoscience 11: 04

Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

2012-07-19T13:46:47Z

R Issaoui, J Achard, A Tallaire, F Silva, A Gicquel, R Bisaro, B Servet, G Garry, J Barjon (2012) Applied Physics Letters http://link.aip.org/link/?APL/100/122109/1 100: 122109

Homoepitaxial boron-doped diamond with very low compensation

2013-01-06T18:43:17Z

Homoepitaxial boron-doped diamond layers grown by chemical vapor deposition on (100)-oriented substrates are studied by Hall effect and resistivity measurements as a function of the temperature. In the range of 140–600 K, the hole concentration is well described by the neutrality equation in the regime of very low compensation, with the characteristic Ei/2 activation energy, where Ei is the io...

J Barjon, E Chikoidze, F Jomard, Y Dumont, M A Pinault-Thaury, R Issaoui, O Brinza, J Achard, F Silva (2012) physica status solidi (a) http://dx.doi.org/10.1002/pssa.201200136 209: 1750-1753

Engineered arrays of nitrogen-vacancy color centers in diamond based on implantation of CN molecules through nanoapertures

2013-03-16T16:40:05Z

We report a versatile method for engineering arrays of nitrogen-vacancy (NV) color centers in diamond at the nanoscale. The defects were produced in parallel by ion implantation through 80 nm diameter apertures patterned using electron beam lithography in a polymethyl methacrylate (PMMA) layer deposited on a diamond surface. The implantation was performed with CN âˆ’ molecules that increased t...

P Spinicelli, A Dreau, L Rondin, F Silva , J Achard, S Xavier, S Bansropun, T Debuisschert, S Pezzagna, J Meijer, V Jacques, J F Roch (2011) New Journal of Physics http://stacks.iop.org/1367-2630/13/i=2/a=025014 13: 073201

Dislocations and impurities introduced from etch-pits at the epitaxial growth resumption of diamond

2012-01-04T09:40:25Z

The fabrication of diamond-based electronic devices requires that several active layers with different doping concentrations are grown in different reactors. In this paper, we have investigated the effect of interrupting and resuming the epitaxial growth of a homoepitaxial diamond film using high-power plasma CVD. It was found that long lifetime blue phosphorescence which is localized on regions w...

A Tallaire, J Barjon, O Brinza, J Achard, F Silva, V Mille, R Issaoui, A Tardieu, A Gicquel (2011) Diamond and Related Materials http://www.sciencedirect.com/science/article/pii/S0925963511001518 20: 875-881

Thick boron doped diamond single crystals for high power electronics

2012-01-04T09:34:43Z

J Achard, F Silva, R Issaoui, O Brinza, A Tallaire, H Schneider, K Isoird, H Ding, S Kone, M A Pinault, F Jomard, A Gicquel (2011) Diamond and Related Materials 20: 145-152

Boron acceptor concentration in diamond from excitonic recombination intensities

2012-07-19T13:49:17Z

Excitonic recombinations are investigated by cathodoluminescence in a series of homoepitaxial diamond layers doped with boron in the range (2 x 10(16))-(5 x 10(18)) at cm(-3). As opposed to earlier observations made on polycrystalline boron-doped diamond, we show that the ratio between the neutral-boron bound exciton and the free-exciton recombination intensities is proportional to the boron conte...

J Barjon, T Tillocher, N Habka, O Brinza, J Achard, R Issaoui, F Silva, C Mer, P Bergonzo (2011) Physical Review B ://000287031900001 83: 073201

Influence of oxygen addition on the crystal shape of CVD boron doped diamond

2012-07-19T13:48:46Z

The development of diamond based devices for high power electronic applications requires the growth of thick heavily boron doped diamond. During the growth of CVD single crystals, the final form of the film depends on the different crystalline faces growth rate with respect to each others. Three parameters (α, β and γ) which correspond to the displacement speeds of the {111}, {110} and {113} fa...

R Issaoui, J Achard, F Silva, A Tallaire, V Mille, A Gicquel (2011) physica status solidi (a) http://dx.doi.org/10.1002/pssa.201100045 208: 2023-2027

Effect of argon addition on the growth of thick single crystal diamond by high-power plasma CVD

2012-07-19T13:47:43Z

Diamond films were synthesized with up to 50% argon in the gas phase using high power plasma-assisted chemical vapour deposition (PACVD). This resulted in a strong increase of the deposition rates. Polycrystalline diamond (PCD) films grown with Ar have shown a higher incorporation of sp2 phases but with no dramatic change in crystal morphologies. Thick single crystal diamond films did not show any...

Alexandre Tallaire, Catherine Rond, Fabien Bénédic, Ovidiu Brinza, Jocelyn Achard, François Silva, Alix Gicquel (2011) physica status solidi (a) http://dx.doi.org/10.1002/pssa.201100017 208: 2028-2032

La synthèse de films de diamant pour des applications en électronique de puissance

2014-03-29T15:47:02Z

A Gicquel, J Achard, F Silva, O Brinza, A Tallaire, K Hassouni (2011) Revue 3EI : Enseigner l’Electrotechnique et l’Electronique Industrielle 65: 74-81

Diode Schottky sur diamant CVD. Simulation, réalisation technologique et étude de protection périphérique.

2014-03-29T15:47:02Z

S Kone, H Ding, F Thion, H Schneider, K Isoird, M L Locatelli, D Planson, J Achard, R Issaoui (2011) European Journal of Electrical Engineering 14: 5 553-567

Evolution of Diamond Crystal Shape with Boron Concentration during CVD Growth

2012-01-04T09:34:43Z

R Issaoui, F Silva, A Tallaire, V Mille, J Achard, A Gicquel, Ferro Gabriel, Siffert Paul (2010) 2010 Wide band cubic semiconductors: from growth to devices: Proceedings of the E-MRS Symposium* F* http://link.aip.org/link/?APC/1292/149/1 1292: 1 149-153

Growth of thick heavily boron-doped diamond single crystals : Effect of microwave power density

2012-07-19T13:55:46Z

The fabrication of diamond-based vertical power devices which are the most suited for high current applications requires the use of thick heavily boron-doped (B-doped) diamond single crystals. Although the growth of thin B-doped diamond films is well controlled over a large concentration range, little is known about the growth conditions leading to heavily doped thick single crystals. In this pape...

R Issaoui, J Achard, F Silva, A Tallaire, A Tardieu, A Gicquel, M A Pinault, F Jomard (2010) Applied Physics Letters ://000283934100034 97: 182101

CVD diamond Schottky barrier diode, carrying out and characterization

2012-01-04T09:34:43Z

S Koné, G Civrac, H Schneider, K Isoird, R Issaoui, J Achard, A Gicquel (2010) Diamond and Related Materials http://www.sciencedirect.com/science/article/B6TWV-4Y95V0G-2/2/7d5a7c71ca4ec713652753d9aabe7699 19: 7-9 792-795

Evolution of Diamond Crystal Shape with Boron Concentration during CVD Growth

2014-03-29T15:47:02Z

Enhanced generation of single optically active spins in diamond by ion implantation

2012-07-19T13:48:22Z

Boris Naydenov, V Richter, Johannes Beck, Matthias Steiner, P Neumann, G Balasubramanian, J Achard, F Jelezko, Jorg Wrachtrup, R Kalish (2010) Applied Physics Letters http://link.aip.org/link/?APL/96/163108/1 96: 163108

Surface transformation of graphite or diamond following Highly Charged Ion irradiation

2012-01-04T09:34:43Z

Highly Charged Ions (HCI) approaching surfaces at nm distances are known to extract a very large number of electrons from the target. Over dielectric surfaces, the positive holes left following the removal of the electrons cannot be immediately neutralized, thereby locally inducing a huge stress and creating permanent surface modifications on very small dots. We present in this paper experiments o...

J P Briand, A Anders, O Monteiro, R Phaneuf, Z Xie, J Achard, M Benhachoum, S Terracol (2009) Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms ://WOS:000264739000029 267: 4 678-682

High quality, large surface area, homoepitaxial MPACVD diamond growth

2012-01-04T09:34:43Z

The use of CVD diamond in electronics has very stringent requirements. For a CVD diamond industry to become viable it is mandatory to obtain very large growth rates (> 5 µm/h), all the while maintaining extremely high purity, a crystalline defect density as low as possible, and large usable surface areas. At the same time, one must keep the stress level within the growing crystal below acceptab...

F Silva, J Achard, O Brinza, X Bonnin, K Hassouni, A Anthonis, K De Corte, J Barjon (2009) Diamond and Related Materials http://www.sciencedirect.com/science/article/B6TWV-4VHSDFD-1/2/08ee26c28ebd2bfecb8a6fc570d03548 18: 5-8 682-697

Identification of etch-pit crystallographic faces induced on diamond surface by H2/O2 etching plasma treatment

2012-01-04T09:34:43Z

Even for samples exhibiting excellent electronic properties in terms of carrier mobility, sample-to-sample variability remains considerable and dislocation density is still very high, the latter characteristic being often related to damages induced either by the substrate polishing step or by substrate bulk dislocations. In order to limit the polishing effect, a pre-treatment based on H2/O2 plasma...

J Achard, F Silva, O Brinza, X Bonnin, V Mille, R Issaoui, M Kasu, A Gicquel (2009) physica status solidi (a) http://dx.doi.org/10.1002/pssa.200982210 206: 9 1949-1954

Ultralong spin coherence time in isotopically engineered diamond

2012-01-04T09:34:43Z

As quantum mechanics ventures into the world of applications and engineering, materials science faces the necessity to design matter to quantum grade purity. For such materials, quantum effects define their physical behaviour and open completely new (quantum) perspectives for applications. Carbon-based materials are particularly good examples, highlighted by the fascinating quantum properties of, ...

G Balasubramanian, P Neumann, D Twitchen, M Markham, R Kolesov, N Mizuochi, J Isoya, J Achard, J Beck, J Tissler, V Jacques, P R Hemmer, F Jelezko, J Wrachtrup (2009) Nature Materials ://000265783500015 8: 5 383-387

Mise en place d'une filière pour la réalisation de composants de puissance en diamant

2014-03-29T15:47:02Z

Gabriel Civrac, Henri Schneider, H U I Ding, Karine Isoird, Sodjan Kone, Jocelyn Achard (2009) Revue internationale de génie électrique 12: 2 237-253

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

2012-01-04T09:34:43Z

Several 65 [mu]m thick epitaxial diamond films prepared on (100) Ib substrates by high power pulsed microwave plasma assisted chemical vapour deposition (HP-MPCVD) are studied as a function of surface treatments by cathodoluminescence (CL) and photoluminescence (PL) spectroscopies. They are either asgrown, or polished, or etched by a microwave oxygen plasma, or after applying subsequently the two...

Pierre-Nicolas Volpe, Pierre Muret, Franck Omnes, Jocelyn Achard, François Silva, Ovidiu Brinza, Alix Gicquel (2009) Diamond and Related Materials http://www.sciencedirect.com/science/article/B6TWV-4W6YDRM-6/2/f1e24bf694befd92e420ce575464af68 18: 10 1205-1210

Dependence of CVD diamond growth rate on substrate orientation as a function of process parameters in the high microwave power density regime

2012-01-04T09:34:43Z

The use of diamond as a material for high power electronics requires high-purity monocrystalline thick diamond films. Hence it is extremely important to have perfect control of the morphology during the entire growth process, so that the useable surface be maximized and residual stresses (which may cause cracking of the sample during the growth process) be limited. To assist in this work, a 3D geo...

O Brinza, J Achard, F Silva, X Bonnin, P Barroy, K De Corte, A Gicquel (2008) physica status solidi (a) http://dx.doi.org/10.1002/pssa.200879716 205: 9 2114-2120

Single crystal CVD diamond growth strategy by the use of a 3D geometrical model : growth on (113) oriented substrates

2012-01-04T09:34:43Z

F Silva, J Achard, X Bonnin, O Brinza, A Michau, A Secroun, K De Corte, S Felton, M E Newton, A Gicquel (2008) Diamond and Related Materials 17: 1067-1075

Geometric modeling of homoepitaxial CVD diamond growth : I. The {100}{111}{110}{113} system

2012-01-04T09:34:43Z

Plasma-assisted CVD homoepitaxial diamond growth is a process that must satisfy many stringent requirements to meet industrial applications, particularly in high-power electronics. Purity control and crystalline quality of the obtained samples are of paramount importance and their optimization is a subject of active research. In the process of such studies, we have obtained high purity CVD diamond...

F Silva, X Bonnin, J Achard, O Brinza, A Michau, A Gicquel (2008) Journal of Crystal Growth http://www.sciencedirect.com/science/article/B6TJ6-4PV94JD-3/2/9ae7c3e7dc39ac4a5c5298b3da1392c7 310: 187-203

METHOD FOR TREATING A DIAMOND SURFACE AND CORRESPONDING DIAMOND SURFACE

2014-03-29T15:47:02Z

Jean-pierre Briand, Nicolas Bechu, Alix Gicquel, Jocelyn Achard (2007) :

Coupled effect of nitrogen addition and surface temperature on the morphology and the kinetics of thick CVD diamond single crystals

2012-01-04T09:34:43Z

In this study, homoepitaxial thick diamond films were grown by CVD at high microwave power densities for temperatures ranging from 800[no-break space][deg]C to 950[no-break space][deg]C and with nitrogen additions from 75 to 200[no-break space]ppm relative to the total gas flow. It was observed that there is a coupled effect of these two parameters on the growth mechanisms of the CVD diamond film....

J Achard, F Silva, O Brinza, A Tallaire, A Gicquel (2007) Diamond and Related Materials http://www.sciencedirect.com/science/article/B6TWV-4M7K9RV-2/2/c6a35fb5fb3c5084d3bbf475694d0965 16: 4-7 685-689

High quality MPACVD diamond single crystal growth : high microwave power density regime

2012-01-04T09:34:43Z

The growth of monocrystalline diamond films of electronic quality and large thickness (>few hundreds of microns) is an important issue in particular for high-power electronics. In this paper, we will describe the different key parameters necessary to reach this objective. First, we will examine the deposition process and establish that only microwave assisted diamond deposition plasma reactors ...

J Achard, F Silva, A Tallaire, X Bonnin, G Lombardi, K Hassouni, A Gicquel (2007) Journal of Physics D : Applied Physics http://www.iop.org/EJ/abstract/0022-3727/40/20/S04 40: 20 6175-6188

Elastic properties of single crystal diamond made by CVD

2012-01-04T09:34:43Z

Brillouin light scattering has been used to investigate the elastic properties of high quality homoepitaxial diamond layers about 1[no-break space]mm thick that have been elaborated by microwave plasma assisted chemical vapour deposition. Taking advantage of the detection of different acoustic modes, a complete elastic characterization of the crystal has been achieved. Three single crystal elastic...

P Djemia, A Tallaire, J Achard, F Silva, A Gicquel (2007) Diamond and Related Materials http://www.sciencedirect.com/science/article/B6TWV-4MK60YR-3/2/014d729b712894178d17c7b3587ef393 16: 4-7 962-965

Improvement of energetic efficiency for homoepitaxial diamond growth in a H2/CH4 pulsed discharge

2012-01-04T09:34:43Z

The use of pulsed discharges for diamond deposition has been demonstrated to ensure a better control of heat transfer from the plasma to the walls in microwave plasma reactors. It also favours the production of CH3 species while keeping constant or higher the H-atom density. Higher growth rates can then be obtained. In this paper is reported an increase of the growth rate by 25% while decreasing t...

O Brinza, J Achard, F Silva, X Duten, A Michau, K Hassouni, A Gicquel (2007) physica status solidi (a) http://dx.doi.org/10.1002/pssa.200776305 204: 9 2847-2853

Dislocation imaging for electronics application crystal selection

2012-01-04T09:34:43Z

High power electronics are today a real challenge for large band gap materials. Devices as simple as switches have to work at ever higher powers and demand material with exceptional properties: in particular, a high breakdown voltage (at least a few 106 V/cm), a high mobility-lifetime product (at least 10-3 cm2/V), and a relatively fast response. As far as diamond is concerned, only thick (100 µm...

A Secroun, O Brinza, A Tardieu, J Achard, F Silva, X Bonnin, K De Corte, A Anthonis, M E Newton, J Ristein, P Geithner, A Gicquel (2007) physica status solidi (a) http://dx.doi.org/10.1002/pssa.200776331 204: 12 4298-4304

Diamond detectors for synchrotron radiation X-ray applications

2012-01-04T09:34:43Z

Due to its unique physical properties, diamond is a very appealing material for the development of electronic devices and sensors. Its wide band gap (5.5 eV) endows diamond based devices with low thermal noise, low dark current levels and, in the case of radiation detectors, high visible-to-X-ray signal discrimination (visible blindness) as well as high sensitivity to energies greater than the ban...

A De Sio, E Pace, G Cinque, A Marcelli, J Achard, A Tallaire (2007) Spectrochimica Acta Part B : Atomic Spectroscopy http://www.sciencedirect.com/science/article/B6THN-4NC38TC-1/2/c4bdb87ea8b1454cae789ecb26d05a29 62: 6-7 558-561

Photoconductive properties of lightly N-doped single crystal CVD diamond films

2012-01-04T09:34:43Z

In the preparation of high power diamond photoswitches, thick (more than 100 [mu]m) lightly nitrogen-doped single crystals were grown at LIMHP, for which Differential Interference Contrast Microscopy, Raman spectroscopy, photoluminescence, and cathodoluminescence have confirmed good morphology and very low but well-controlled impurity doping level. In order to evaluate the effect of nitrogen incor...

A Secroun, A Tallaire, J Achard, G Civrac, H Schneider, A Gicquel (2007) Diamond and Related Materials http://www.sciencedirect.com/science/article/B6TWV-4MSHXYS-3/2/9d40837efe56c1496cb116d463b8172e 16: 4-7 953-957

Study of CVD diamond films for thermal management in power electronics

2012-01-04T09:34:43Z

Because of its high thermal conductivity and dielectric strength, diamond is a promising material for thermal management in high voltage, high power electronics. In this paper we present our investigation of CVD polycrystalline diamond films for heat sink applications. Dielectric strength and thermal conductivity have been measured at room temperature, for either home made or commercial samples. T...

H Schneider, M L Locatelli, J Achard, E Scheid, P Tounsi, H Ding (2007) 2007 European Conference on Power Electronics and Applications, Vols 1-10 ://WOS:000255993601142 : 2896-2903

Dosimetric properties of thick single CVD crystal diamonds

2012-01-04T09:34:43Z

Three thick single crystals grown at LIMHP were investigated in regard to their thermoluminescent and electric properties like glow curve, repeatability, linearity and the current under irradiation. The crystals A, B and C showed only a very short range of the linearity after irradiation with Cs-137 and Co-60 gamma rays. Next, the samples were investigated regarding to their electrical properties....

F Schirru, B Marczewska, A Tallaire, J Achard, T Nowak, P Olko (2007) Physica Status Solidi (a) http://dx.doi.org/10.1002/pssa.200776320 204: 9 3030-3035

Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition

2012-01-04T09:34:43Z

Single-crystal homoepitaxial diamond has been grown by chemical vapour deposition using a high-density microwave plasma. It has been shown that the growth rate can be increased by factors of up to 2.5 by adding small concentrations (2 to 10[no-break space]ppm) of nitrogen to the gas phase. Free-standing specimens up to 1.7[no-break space]mm thick have been characterised using optical absorption, c...

A Tallaire, A T Collins, D Charles, J Achard, R Sussmann, A Gicquel, M E Newton, A M Edmonds, R J Cruddace (2006) Diamond and Related Materials http://www.sciencedirect.com/science/article/B6TWV-4JDN6C3-7/2/bad5689bb4b541bd91a32a3bf2e56108 15: 10 1700-1707

Multiple growth and characterization of thick diamond single crystals using chemical vapour deposition working in pulsed mode

2012-01-04T09:34:43Z

In this paper, the fast growth of three thick diamond single crystals using the chemical vapour deposition (CVD) method working in a pulsed mode is reported. After 48 h, a total of half a carat of uncoloured synthetic diamond was obtained. These crystals, exhibiting thicknesses of 430, 570 and 900 [mu]m, were then thoroughly analysed by a wide range of characterization techniques, such as Raman sp...

A Tallaire, J Achard, A Secroun, O De Gryse, F De Weerdt, J Barjon, F Silva, A Gicquel (2006) Journal of Crystal Growth http://www.sciencedirect.com/science/article/B6TJ6-4K1X89K-7/2/240421f1a2f18c2f90b1c2a457f4f268 291: 2 533-539

3D crystal growth model for understanding the role of plasma pre-treatment on CVD diamond crystal shape

2012-01-04T09:34:43Z

The progress that has been achieved over the past few years on the growth of thick and high purity homo-epitaxial single crystal diamond by chemical vapour deposition (CVD) has opened a wide range of possible applications in areas such as optics or power electronics. Recently, high quality single crystals were produced at LIMHP with growth rates close to 20 µm/h using relatively high microwave po...

F Silva, J Achard, X Bonnin, A Michau, A Tallaire, O Brinza, A Gicquel (2006) physica status solidi (a) http://dx.doi.org/10.1002/pssa.200671101 203: 12 3049-3055

The control of growth parameters in the synthesis of high-quality single crystalline diamond by CVD

2012-01-04T09:34:43Z

This is a detailed study of the process parameters that control the synthesis of homoepitaxial single-crystal diamond by chemical vapour deposition (CVD) using a microwave plasma-assisted reactor. The effects of substrate temperature, methane concentration and microwave power density on the surface morphology and purity of the synthesized diamond has been studied using diffraction enhanced and ato...

J Achard, A Tallaire, R Sussmann, F Silva, A Gicquel (2005) Journal of Crystal Growth http://www.sciencedirect.com/science/article/B6TJ6-4H4T14Y-2/2/e3626664f4da6d9bf5a1322f939979c2 284: 3-4 396-405

Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration

2012-01-04T09:34:43Z

Diamond has been identified as a very promising material for X and ultraviolet sensing. In this Letter, a photoconductive device based on a freestanding homoepitaxial chemically vapor deposition (CVD) single-crystal diamond 500 mu m thick has been tested. Photoconductive measurements in coplanar and transverse configurations have been performed to characterize the device sensitivity in the 140-250...

A De-Sio, J Achard, A Tallaire, R S Sussmann, A T Collins, F Silva, E Pace (2005) Applied Physics Letters 86: 21

Effect of increasing the microwave density in both continuous and pulsed wave mode on the growth of monocrystalline diamond films

2012-01-04T09:34:43Z

Diamond synthetic single crystals exhibiting a high and reliable quality would find many applications in different areas such as optics, mechanics, or electronic devices. In this study, thick high quality homoepitaxial diamond films were grown on synthetic substrates using Micro-Wave Plasma Assisted Chemical Vapour Deposition. The effect of increasing the density of the hydrogen methane discharge ...

A Tallaire, J Achard, F Silva , A Gicquel (2005) physica status solidi (a) http://dx.doi.org/10.1002/pssa.200561904 202: 11 2059-2065

Experimental CVD synthetic diamonds from LIMHP-CNRS, France

2012-01-04T09:34:43Z

In the last decade, progress in diamond growth by chemical vapor deposition (CVD) has resulted in significant improvement in the quality of synthetic single crystals. This article reports on the gemological and spectroscopic features of six synthetic type IIa diamonds grown for research purposes at the French Laboratoire d'Ingenierie des Materiaux et des Hautes Pressions (LIMHP-CNRS), and compares...

W Y Wang, A Tallaire, M S Hall, T M Moses, J Achard, R S Sussmann, A Gicquel (2005) Gems & Gemology ://000232887000003 41: 3 234-244

Homoepitaxial deposition of high-quality thick diamond films : effect of growth parameters

2012-01-04T09:34:43Z

Owing to its exceptional properties, monocrystalline diamond is one possible interesting candidate for high-power electronic applications if a suitable and reproducible process allowing the deposition of high-quality thick films within a reasonable time is developed. In this paper, a Microwave Plasma-Assisted Chemical Vapour Deposition (MWPACVD) two-step process at high plasma density (microwave p...

A Tallaire, J Achard, F Silva, R S Sussmann, A Gicquel (2005) Diamond and Related Materials http://www.sciencedirect.com/science/article/B6TWV-4F00TSG-3/2/0319960ffb6545e0522bf06bf24a152c 14: 3-7 249-254

The use of CVD diamond for high-power switching using electron beam exitation

2012-01-04T09:34:43Z

Depending on purity, diamond could exhibit very high breakdown threshold voltages, high free carrier mobilities and relatively high free carrier lifetimes. For these reasons, diamond has been considered to be well suited for radiation induced high power switching applications in continuous operation mode. Excitation using deep UV sources has been studied but it suffers from their intrinsic low con...

J Achard, F Silva, H Schneider, R S Sussmann, A Tallaire, A Gicquel, M C Castex (2004) Diamond and Related Materials http://www.sciencedirect.com/science/article/B6TWV-4BMK2C4-G/2/03aad00479a215ce6eba9a0bc4f793e1 13: 4-8 876-880

Oxygen plasma pre-treatments for high quality homoepitaxial CVD diamond deposition

2012-01-04T09:34:43Z

In this study, homoepitaxial diamond films were grown on HPHT Ib synthetic diamonds by microwave plasma assisted CVD (MWPACVD) using a two step process. Etching of the diamond substrates prior to growth was performed in oxygen-hydrogen or oxygen-argon-hydrogen plasmas for different etching times. After this step, homoepitaxial growth was performed for 20 hours. High quality monocrystalline diamond...

A Tallaire, J Achard, F Silva, R S Sussmann, A Gicquel, E Rzepka (2004) physica status solidi (a) http://dx.doi.org/10.1002/pssa.200405164 201: 11 2419-2424

Bulk CVD diamond devices for UV and XUV detection

2012-01-04T09:34:43Z

Owing to its semiconducting properties (wide band gap, high electron and hole mobility), diamond is an interesting material for UV and XUV photodetection. In the present study, we have characterized UV and XUV diamond photodetector efficiency using bulk photoconductivity instead of usual coplanar devices. For comparisons, chemical vapor deposition diamond films of 200- mu m thickness have been fab...

M C Castex, E Lefeuvre, J Achard, A Tardieu, C Beuille, H Schneider (2003) Diamond and Related Materials 12: 10-11 1804-8

Bulk photoconductivity of CVD diamond films for UV and XUV detection

2012-01-04T09:34:43Z

Owing to its semiconducting properties (wide band gap, high electron and hole mobility), diamond is an interesting material for UV and XUV photodetection. In the present study, we have characterized UV and evaluated XUV diamond photodetector efficiency using volume photoconductivity instead of usual surface interdigited devices. The detectors have been tested under over-gap (13 and 193 nm) as well...

E Lefeuvre, J Achard, M C Castex, H Schneider, C Beuille, A Tardieu (2003) Diamond and Related Materials http://www.sciencedirect.com/science/article/B6TWV-485V1CD-1/2/11f2a013b2630208b88a4b7cb0d5b0f8 12: 3-7 642-646

Characterizations of metal-diamond-silicon associations for active power electronics applications

2012-01-04T09:34:43Z

Wide band gap semiconductors are discussed as materials for photonic or electron-beam controlled switches. Chemical vapour deposited (CVD) diamond has recently become the subject of intense research activity mainly due to its unique combination of thermal, mechanical and optoelectronical properties. The very high thermal conductivity, added to a high working temperature and a high dielectric stren...

C Beuille, E Dutarde, H Schneider, M C Castex, E Lefeuvre, J Achard, F Silva (2002) Power Electronics Specialists Conference 4: 1764-1768

Photoconductivity of highly oriented and randomly oriented diamond films for the detection of fast UV laser pulses

2012-01-04T09:34:43Z

Diamond is a wide band-gap material that, depending on purity may exhibit a short carrier lifetime and because of its strong lattice bonding it generally exhibits a high damage threshold. For these reasons it is considered to be suitable for fast and solar blind UV detectors. The use of highly oriented diamond (HOD) films should be advantageous over randomly oriented diamond (ROD) films because of...

J Achard, A Tardieu, A Kanaev, A Gicquel, M C Castex, Y Yokota, K Hayashi, T Tachibana, K Kobashi (2002) Diamond and Related Materials http://www.sciencedirect.com/science/article/B6TWV-45TS9FW-R/2/b0851ca380e472280000d5b84cb2d454 11: 3-6 423-426

CVD diamond films : from growth to applications

2012-01-04T09:34:43Z

Alix Gicquel, Khaled Hassouni, Francois Silva, Jocelyn Achard (2001) Current Applied Physics http://www.sciencedirect.com/science/article/B6W7T-4441VWP-4/2/47008235327d95bd92a4a6def44f4427 1: 6 479-496

Temporal response of UV sensors made of highly oriented diamond films by 193 and 313 nm laser pulses

2012-01-04T09:34:43Z

Ultraviolet sensors were fabricated on a Si substrate using an undoped, highly oriented diamond film with Pt and Al interdigited electrodes with a gap length of 5, 10 and 15 mu m. Transient voltage outputs due to photocurrent of the sensors under a bias voltage of 20, 40 and 80 V were measured by the pulsed irradiation of an ArF excimer laser ( lambda =193 nm, pulse width=5 ns) or a dye laser ( la...

K Hayashi, Y Yokota, T Tachibana, K Kobashi, J Achard, A Gicquel, C Olivero, M C Castex, A Treshchalov (2001) Diamond and Related Materials 10: 9-10 1794-8

Comments on the appearance of "mirror" peaks in mobility spectrum analysis of semiconducting devices

2012-01-04T09:34:43Z

The characterization of semiconductor heterostructures from their mobility spectra has originally been proposed, some 12 years ago, as an improvement of Hall effect measurements. However, the application is far from being trivial and often leads to the occurrence of extra peaks without any physical interpretation. They are generally referred to as “mirror peaks” and are interpreted in ...

J Achard, C Varenne-Guillot, F Barbarin, M Dugay (2000) Applied Surface Science http://www.sciencedirect.com/science/article/B6THY-40HV0YX-S/2/0286604f431bf4adc3a4fac9a7c954d7 158: 3-4 345-352

Low roughness diamond films produced at temperatures less than 600[deg]C

2012-01-04T09:34:43Z

Recent progress has been made in the production of low-roughness Chemical Vapor Deposition (CVD) diamond films at temperatures less than 600[deg]C. These films are particularly suitable for cutting tool applications. Such progress was achieved by simultaneously promoting the renucleation process and controlling the growth process at low temperatures. In this paper, we show that below 700[deg]C (un...

F Silva, A Gicquel, A Chiron, J Achard (2000) Diamond and Related Materials http://www.sciencedirect.com/science/article/B6TWV-41MB19X-4/2/105318144f9ca62a6ffbf3c89b4685c9 9: 12 1965-1970

Capacitance-voltage profiling and thermal evolution of the conduction band-offset of unstrained Ga0.47In0.53As/InP single quantum well

2012-01-04T09:34:43Z

We report the results of capacitance-voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements performed upon a Ga0.47In0.53As/InP quantum well structure. At room temperature, a conduction-band offset Delta E-c = (200+/-10)meV and charge densities sigma(1) = +/-(3+/-1)*10(11) times the electronic charge per cm(2) have been measured from C-V experiments. At lower temperature (T less t...

C Guillot, J Achard, F Barbarin, M Dugay (1999) Journal of Electronic Materials ://000081903800009 28: 8 975-979

Electrical characterization of InP epitaxial layers using mobility spectrum technique

2012-01-04T09:34:43Z

The paper reports a study of electrical properties of InP layers (<3 [mu]m thick) epitaxied by MOVPE and HVPE. The technique used is the so-called mobility spectrum method in which the maxima of carrier density are determined as a continuous function of mobility. A reduced conductivity tensor (RCT) adjustment allows to improve the accuracy in the determination of density and mobility values. In su...

J Achard, C Guillot, F Barbarin, M Dugay, E Goumet (1999) Applied Surface Science http://www.sciencedirect.com/science/article/B6THY-3WBNT54-35/2/b64772f1b81a05072df578c5f6f03574 142: 1-4 455-459

Metal-n-InP rectifying properties enhancement with Zn based metallizations and diffusion at moderate annealing temperatures

2012-01-04T09:34:43Z

Rectifying contacts on n-InP using Zn based metallizations followed by moderate annealing temperature and time were studied. Diffusion of Zn atoms at the metal-semiconductor interface creates a thin p-InP layer. Pseudo-Schottky junctions were obtained with a significant barrier height enhancement, typically 0.2-0.25 eV. The metallization process involved throughout the present work leads to high q...

F Barbarin, C Guillot, J Achard, M Dugay, B Lauron, D Z Kim (1997) Journal De Physique Iii ://A1997XL27100014 7: 7 1523-1535