Abstract: We study the effect of elastic anisotropic biaxial strain, induced by a piezoelectric actuator, on the light emitted by neutral excitons confined in different kinds of epitaxial quantum dots. We find that the light polarization rotates by up to similar to 80 degrees and the fine structure splitting (FSS) varies nonmonotonically by several tens of mu eV as the strain is varied. These findings provide the experimental proof of a recently predicted strain-induced anticrossing of the bright states of neutral excitons in quantum dots. Calculations on model dots qualitatively reproduce the observations and suggest that the minimum reachable FSS critically depends on the orientation of the strain axis relative to the dot elongation.
Abstract: We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots placed onto piezoelectric actuators. With increasing compression, the emission blueshifts and the binding energies of the positive trion (X+) and biexciton (XX) relative to the neutral exciton (X) show a monotonic increase. This phenomenon is mainly ascribed to changes in electron and hole localization and it provides a robust method to achieve color coincidence in the emission of X and XX, which is a prerequisite for the possible generation of entangled photon pairs via the recently proposed "time reordering'' scheme.
Abstract: Microtubular optical microcavities from rolled-up ring resonators with subwavelength wall thicknesses have been fabricated by releasing prestressed SiO/SiO2 bilayer nanomembranes from photoresist sacrificial layers. Whispering gallery modes are observed in the photoluminescence spectra from the rolled-up nanomembranes, and their spectral peak positions shift significantly when measurements are carried out in different surrounding liquids, thus indicating excellent sensing functionality of these optofluidic microcavities. Analytical calculations as well as finite-difference time-domain simulations are performed to investigate the light confinement in the optical microcavities numerically and to describe the experimental mode shifts very well. A maximum sensitivity of 425 nm/refractive index unit is achieved for the microtube ring resonators, which is caused by the pronounced propagation of the evanescent field in the surrounding media due to the subwavelength wall thickness design of the microcavity. Our optofluidic sensors show high potential for lab-on-a-chip applications, such as real-time bioanalytic systems.
Abstract: We report on a magnetophotoluminescence study of single self-assembled semiconductor nanorings which are fabricated by molecular-beam epitaxy combined with AsBr3 in situ etching. Oscillations in the neutral exciton radiative recombination energy and in the emission intensity are observed under an applied magnetic field. Further, we control the period of the oscillations with a gate potential that modifies the exciton confinement. We infer from the experimental results, combined with calculations, that the exciton Aharonov-Bohm effect may account for the observed effects.
Abstract: Tunable biaxial stresses, both tensile and compressive, are applied to a single layer graphene by utilizing piezoelectric actuators. The Gruneisen parameters for the phonons responsible for the D, G, 2D and 2D' peaks are studied. The results show that the D peak is composed of two peaks, unambiguously revealing that the 2D peak frequency (omega(2D)) is not exactly twice that of the D peak (omega(D)). This finding is confirmed by varying the biaxial strain of the graphene, from which we observe that the shift of omega(2D)/2 and omega(D) are different. The employed technique allows a detailed study of the interplay between the graphene geometrical structures and its electronic properties.
Abstract: We have studied the emission properties of single CdTe/ZnTe quantum dots (QDs) grown on Si(001) substrates by using molecular beam epitaxy and atomic layer epitaxy. The good quality of the QDs is attested by the resolution-limited emission, negligible background and absence of measurable spectral jitter or blinking. Power-dependent, polarization-dependent, and temperature-dependent microphotoluminescence spectroscopy measurements were performed to identify the exciton, the biexciton, and two oppositely charged excitons in the emission spectra of single QDs.
Abstract: Tubular optical microcavities have been fabricated by releasing prestressed SiO/SiO2 bilayer nanomembranes from polymer sacrificial layers, and their geometrical structure is well controlled by defining the shape of nanomembranes via photolithography. Optical measurements at room temperature demonstrate that resonant modes of microtubular cavities rolled up from circular shapes can be tuned in peak energy and relative intensity along the tube axes compared to those from square patterns. The resonant modes shift to higher energy with decreasing number of tube wall rotations and thickness, which fits well to finite-difference time-domain simulations. Polarization resolved measurements of the resonant modes indicate that their polarization axes are parallel to the tube axis, independent of the polarization of the excitation laser.
Abstract: Epitaxial self-assembled quantum dots (QDs) are commonly obtained by the Stranski-Krastanow (SK) growth mode, in which QDs form on top of a thin two-dimensional (2D) wetting layer (WL). In SK QDs, the properties of the WL such as thickness and composition are hard to control independently of those of the overlying QDs. We investigate here strain-free GaAs/AlGaAs QDs located under a GaAs quantum well (QW), analogous to the WL in SK QDs. The thickness of such a QW can be arbitrarily controlled, allowing the optical properties of the QDs to be tuned without modifying the QD morphology and/or composition. By means of single-QD photoluminescence spectroscopy, we observe well-resolved excited-state shell structures with intershell spacing increasing monotonically with decreasing QW thickness. This behavior is well reproduced by eight-band k.p calculations combined with the configuration-interaction model taking the realistic QD morphology as input. Furthermore, for the thinnest GaAs layer investigated here, no QW emission is detected, indicating that it is possible to suppress the two-dimensional layer usually connecting QDs. Finally, we find that all recombination involving an electron-hole pair in the ground state, including the positive trion, occurs at the low-energy side of the neutral exciton emission. This behavior, previously observed for GaAs/AlGaAs QWs, is a consequence of the large lateral extent of the QDs, and hence of pronounced self-consistency and correlation effects.
Abstract: Arrays of GaAs microring optical resonators with embedded InGaAs quantum dots (QDs) are placed on top of Pb(Mg1/3Nb2/3)O-3-PbTiO3 piezoelectric actuators, which allow the microcavities to be reversibly "stretched" or "squeezed" by applying relatively large biaxial stresses at low temperatures. The emission energy of both QDs and optical modes red-or blue-shift depending on the strain sign, with the QD emission shifting more rapidly than the optical mode with applied strain. The QD energy shifts are used to estimate the strain in the structures based on linear deformation potential theory and the finite element method. The shift of the modes is attributed to both the physical deformation and the change in refractive index due to the photoelastic effect. Remarkably, excitonic emissions from different QDs are observed to shift at different rates, implying that this technique can be used to bring spatially separated excitons into resonance. (C) 2009 Optical Society of America
Abstract: We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot molecules (QDMs) embedded in a GaAs matrix and we discuss strategies to fully control their spatial configuration and electronic properties. The three-dimensional morphology of encapsulated QDMs was revealed by selective wet chemical etching of the GaAs top capping layer and subsequent imaging by atomic force microscopy (AFM). The AFM investigation showed that different overgrowth procedures have a profound consequence on the QDM height and shape. QDMs partially capped and annealed in situ for micro-photoluminescence spectroscopy consist of shallow but well-defined quantum dots (QDs) in contrast to misleading results usually provided by surface morphology measurements when they are buried by a thin GaAs layer. This uncapping approach is crucial for determining the QDM structural parameters, which are required for modeling the system. A single-band effective-mass approximation is employed to calculate the confined electron and heavy-hole energy levels, taking the geometry and structural information extracted from the uncapping experiments as inputs. The calculated transition energy of the single QDM shows good agreement with the experimentally observed values. By decreasing the edge-to-edge distance between the two QDs within a QDM, a splitting of the electron (hole) wavefunction into symmetric and antisymmetric states is observed, indicating the presence of lateral coupling. Site control of such lateral QDMs obtained by growth on a pre-patterned substrate, combined with a technology to fabricate gate structures at well-defined positions with respect to the QDMs, could lead to deterministically controlled devices based on QDMs.
Abstract: The properties of the wetting layer (WL) of InAs nanorings grown by droplet epitaxy have been studied. The heavy-hole (HH) and light-hole (LH) related transitions of the In(Ga)As WL were observed by reflectance difference spectroscopy. From the temperature dependent photoluminescence behavior of InAs rings, the channel for carriers to redistribute was found to be the compressed GaAs instead of the In(Ga)As layer, which strongly indicated that the wetting layer was depleted around the rings. Futhermore, a complex evolution of the WL with In deposition amount has been observed. (c) 2008 American Institute of Physics.
Abstract: We have developed a generic approach to engineer tubular micro-/nanostructures out of many different materials (see figure) with tunable diameters and lengths by precisely releasing and rolling up functional nanomembranes on polymers. The technology spans across different scientific fields ranging from photonics to biophysics and we demonstrate optical ring resonators, magneto-fluidic sensors, remotely controlled microjets and 2D confined channels for cell growth guiding.
Abstract: The photoluminescence (PL) of Mn-implanted quantum dot (QD) samples after rapid annealing is studied. It is found that the blue shift of the PL peak of the QDs, introduced by the rapid annealing, decreases abnormally as the implantation dose increases. This anomaly is probably related to the migration of Mn atoms to the InAs QDs during annealing, which leads to strain relaxation when Mn atoms enter InAs QDs or to the suppression of the inter-diffusion of In and Ga atoms when Mn atoms surround QDs. Both effects will suppress the blue shift of the QD PL peaks. The temperature dependence of the PL intensity of the heavily implanted QDs confirms the existence of defect traps around the QDs. (c) 2006 Elsevier B.V. All rights reserved.
Abstract: The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigated by combining atomic force microscopy and removal of the GaAs cap layer by selective wet etching. This method is used to investigate how the morphology of In(Ga)As quantum dots changes upon GaAs capping and subsequent in situ etching with AsBr3. A wave function calculation based on the experimentally determined morphologies suggests that quantum dots transform into quantum rings during in situ etching. (c) 2007 American Institute of Physics.
Abstract: This paper focuses on the study of carrier channels of multimodal-sized quantum dots formed on patterned substrate by a rate-equation-based model. Surface-mediated indium adatom migration is revealed by a direct comparison between quantum dot wetting layer, which acts as carrier channel, formed on a flat substrate and on a patterned substrate. For the assessment of suitability, the carrier channel of the dot-in-well structure has also been studied by the present model, and the transition energies of the carrier channel (e.g., InGaAs quantum well) obtained from theoretical simulation agree fairly well with those obtained from the reflectance measurements.
Abstract: We grow InGaAs quantum dot (QD) at low growth rate with 70 times insertion of growth interruption in MBE system. It is found that because of the extreme growth condition, QDs exhibit a thick wetting layer, large QD height value and special surface morphology which is attributed to the enhanced adatom surface diffusion and In-segregation effect. Temperature dependence of photoluminescence measurement from surface QD shows that this kind of QD has good thermal stability which is explained in terms of the presence of surface oxide. The special distribution of QD may also play a role in this thermal character. (c) 2006 Elsevier B.V. All rights reserved.
