Abstract: This paper presents a theoretical study on the light absorption characteristics of solar cell. We have analyzed the temperature dependence of the absorption coefficient of light and the percentage of the incident light absorbed by the solar cell. We have investigated numerically these characteristics using Si and GaAs based quantum dot in the active layer of the solar cell. Numerical results obtained are compared. The comparison results reveal that the absorption coefficient of the solar cell has been increased significantly using GaAs based quantum dot in the active layer of the solar cell. Therefore GaAs has been proved to be the best alternative material to fabricate solar cell with higher absorption coefficient and higher light absorption rate in the upcoming decades.
