Abstract: We present an advanced wavelength-division multiplexing point-to-point network enabled by silicon nanophotonic devices. This network offers strictly non-blocking all-to-all connectivity while maximizing bisection bandwidth, making it ideal for multi-core and multi-processor interconnections. We introduce one of the key components, the nanophotonic grating coupler, and discuss, for the first time, how this device can be useful for practical implementations of the wavelength-division multiplexing network using optical proximity communications. Finite difference time-domain simulation of the nanophotonic grating coupler device indicates that it can be made compact (20 microm x 50 microm), low loss (3.8 dB), and broadband (100 nm). These couplers require subwavelength material modulation at the nanoscale to achieve the desired functionality. We show that optical proximity communication provides unmatched optical I/O bandwidth density to electrical chips, which enables the application of wavelength-division multiplexing point-to-point network in macrochip with unprecedented bandwidth-density. The envisioned physical implementation is discussed. The benefits of such an interconnect network include a 5-6x improvement in latency when compared to a purely electronic implementation. Performance analysis shows that the wavelength-division multiplexing point-to-point network offers better overall performance over other optical network architectures.
Abstract: We report the first compact silicon CMOS 1x4 tunable multiplexer/ demultiplexer using cascaded silicon photonic ring-resonator based add/drop filters with a radius of 12 microm, and integrated doped-resistor thermal tuners. We measured an insertion loss of less than 1 dB, a channel isolation of better than 16 dB for a channel spacing of 200 GHz, and a uniform 3 dB pass band larger than 0.4 nm across all four channels. We demonstrated accurate channel alignment to WDM ITU grid wavelengths using integrated silicon heaters with a tuning efficiency of 90 pm/mW. Using this device in a 10 Gbps data link, we observed a low power penalty of 0.6 dB.
Abstract: We demonstrate spectral tunability for microphotonic add-drop filters manufactured as ring resonators in a commercial 130 nm SOI CMOS technology. The filters are provisioned with integrated heaters built in CMOS for thermal tuning. Their thermal impedance has been dramatically increased by the selective removal of the SOI handler substrate under the device footprint using a bulk silicon micromachining process. An overall ~20x increase in the tuning efficiency has been demonstrated with a 100 µm radius ring as compared to a pre-micromachined device. A total of 3.9 mW of applied tuning power shifts the filter resonant peak across one free spectral node of the device. The Q-factor of the resonator remains unchanged after the co-integration process and hence this device geometry proves to be fully CMOS compatible. Additionally, after the cointegration process our result of 2π shift with 3.9 mW power is among the best tuning performances for this class of devices. Finally, we examine scaling the tuning efficiency versus device footprint to develop a different performance criterion for an easier comparison to evaluate thermal tuning. Our criterion is defined as the unit of power to shift the device resonance by a full 2π phase shift.
Abstract: Optical proximity communication (OPxC) with reflecting mirrors is presented. Direct optical links are demonstrated for silicon chips with better than -2.5dB coupling loss, excluding surface losses. OPxC is a true broadband solution with little impairment to the signal integrity for high-speed optical transmission. With wavelength division multiplexing (WDM) enabled OPxC, very high bandwidth density I/O, orders of magnitude higher than the traditional electrical I/O, can be achieved for silicon chips.
Abstract: We have analyzed the linearity performance of analog fiber-optic links based on electroabsorption modulators (EAM) operating at high optical power. The negative feedback caused by photocurrent generation improves the modulator linearity in the gain saturation regime. In the absence of laser relative intensity noise (RIN), the link spur-free dynamic range (SFDR) increases with the power of four-thirds of the input optical power after gain saturation occurs. A multi-octave SFDR of more than 135 dB/Hz2/3 has been found to be achievable with sufficiently high power.
