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jean-francois michaud

Université de Tours, Laboratoire de Microélectronique de Puissance

jean-francois.michaud@univ-tours.fr


Journal articles

2011	X Song, A E Bazin, J F Michaud, F Cayrel, M Zielinski, M Portail, T Chassagne, E Collard, D Alquier (2011) Electrical characterization of nitrogen implanted 3C-SiC by SSRM and cTLM measurements Materials Science Forum 679-680: 193 Abstract: Notes:
	X Song, J Biscarrat, J F Michaud, F Cayrel, M Zielinski, T Chassagne, M Portail, E Collard, D Alquier (2011) Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC Nuclear Instruments and Methods in Physics Research B Abstract: Notes:
	M Zielinski, J F Michaud, S Jiao, T Chassagne, A E Bazin, A Michon, M Portail, D Alquier (2011) Analytical model of stress relaxation in 3C SiC layers on silicon Materials Science Forum 679-680: 79 Abstract: Notes:
2010	M Zielinski, C Moisson, S Monnoye, H Mank, T Chassagne, S Roy, A E Bazin, J F Michaud, M Portail (2010) Recent advances in surface preparation of silicon carbide and other wide band gap materials Materials Science Forum 645-648: 753 Abstract: Notes:
	A E Bazin, J F Michaud, C Autret-Lambert, F Cayrel, T Chassagne, M Portail, M Zielinski, E Collard, D Alquier (2010) Ti-Ni ohmic contacts on 3C-SiC doped by nitrogen or by phosphorus implantation Materials Science and Engineering B 171: 120 Abstract: Notes:

	X Song, J F Michaud, F Cayrel, M Zielinski, M Portail, T Chassagne, E Collard, D Alquier (2010) Evidence of electrical activity of extended defects in 3C-SiC grown on Si Applied Physics Letters 96: 142104 Abstract: Notes:
2007	A E Bazin, T Chassagne, J F Michaud, A Leycuras, M Portail, M Zielinski, E Collard, D Alquier (2007) Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates Materials Science Forum 556-557: 721 Abstract: Notes:
2006	J F Michaud, R Rogel, T Mohammed-Brahim, M Sarret (2006) Cw argon laser crystallization of silicon films: structural properties Journal of Non-Crystalline Solids 352: 998 Abstract: Notes:
2005	C Cordier, A Boukhenoufa, L Pichon, J F Michaud (2005) Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions Solid State Electronics 49: 1376 Abstract: Notes:
	J F Michaud, R Rogel, T Mohammed-Brahim, M Sarret, O Bonnaud (2005) Solid phase post-treatment of polysilicon films by a continuous argon laser Thin Solid Films 487: 81 Abstract: Notes:
2003	A Saboundji, J F Michaud, T Mohammed-Brahim, F Le Bihan, G Andrä, J Bergmann, F Falk (2003) Polysilicon thin-film transistors based on frequency doubled cw-Nd:YVO4 laser crystallized silicon Solid State Phenomena 93: 55 Abstract: Notes:
Conference papers

2010	J F Michaud, S Jiao, A E Bazin, M Portail, T Chassagne, M Zielinski, D Alquier (2010) Micromachining of thin 3C-SiC films for mechanical properties investigation In: Materials Research Society Symposium Proceedings 1246 (2010) 213. Abstract: Notes:
	S Jiao, M Zielinski, S Roy, T Chassagne, J F Michaud, M Portail, D Alquier (2010) Detailed study of the influence of surface misorientation on the density of Anti-Phase Boundaries in 3C-SiC layers grown on (001) silicon In: AIP Conference Proceedings, 1292 (2010) 15. Abstract: Notes:
	A E Bazin, J F Michaud, F Cayrel, M Portail, T Chassagne, M Zielinski, E Collard, D Alquier (2010) High quality ohmic contacts on n-type 3C-SiC obtained by high and low process temperature In: AIP Conference Proceedings, 1292 (2010) 51. Abstract: Notes:
	M Zielinski, S Jiao, T Chassagne, A Michon, M Nemoz, M Portail, J F Michaud, D Alquier (2010) Evaluation of the crystalline quality of strongly curved 3C-SiC/Si epiwafers through X-Ray Diffraction analyses In: AIP Conference Proceedings, 1292 (2010) 115. Abstract: Notes:
2008	A E Bazin, J F Michaud, M Portail, T Chassagne, M Zielinski, J M Lecoq, E Collard, D Alquier (2008) P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si In: Materials Research Society Symposium Proceedings 1068 (2008) 261. Abstract: Notes:
2005	Boukhenoufa, L Pichon, C Cordier, B Cretu, L Ding, R Carin, J F Michaud, T Mohammed-Brahim (2005) Apparent noise parameter behavior in n-MOS transistors operating from subthreshold to above-threshold regions In: 18th International Conference on Noise and Fluctuations, Proceedings 780 319-322 Abstract: Notes:
2004	G Le Meur, B Bourouga, J F Michaud, T Mohammed-Brahim (2004) Modeling of the heating of a silicon thin film on a glass substrate during a cw argon laser crystallization process In: 6th International Symposium on Heat Transfer, Beijing (Chine) 137-142 Abstract: Notes:
	J F Michaud, R Rogel, T Mohammed-Brahim, M Sarret, O Bonnaud (2004) Continuous wave argon laser crystallization of patterned silicon In: 11th International Display Workshops, Niigata (Japon) 431-434 Abstract: Notes:
	A Saboundji, J F Michaud, T Mohammed-Brahim, O Bonnaud, G Andrä, J Bergmann, F Falk (2004) Impact of the use of the second harmonic cw Nd:YVO4 laser to crystallize amorphous silicon films on the TFTs performance In: 11th International Workshop on AMLCD, Tokyo (Japon) 303-306 Abstract: Notes:
PhD theses

2004	(2004) Mise au point d'une technologie de cristallisation de silicium par laser argon continu. Application à la réalisation de transistors en couches minces Université de Rennes 1 Abstract: Notes:

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