Abstract: In this letter, the authors report on the high-frequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of single-wall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (|H<sub>21</sub>| <sup>2</sup>) cutoff frequency (f<sub>t</sub>) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivable
Abstract: Chemically and biochemically-directed assembly of nanotubes (NT) for electronics is reviewed. Examples of new field-effect devices prepared this way either for high frequency (40GHz) operation or for applications to an optoelectronics multilevel memory are presented. A route towards (bio)molecular interconnects for NTs is outlined
Abstract: The paper reports high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency F<sub>T</sub> of 1 GHz, with a slope of -20dB/decade, for the first time
