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Journal articles |
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2007 |
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2006 |
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2005 |
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2004 |
P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, D Tsoukalas, C Bonafos, G Ben Assayag, N Cherkashin, A Claverie, J A Van Den Berg, V Soncini, A Agarwal, M Ameen, M Perego, M Fanciulli (2004) Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 216: 228-238 FEB Abstract: Notes:
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C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, G B Assayag, A Claverie, T Muller, K H Heinig, M Perego, M Fanciulli, P Dimitrakis, P Normand (2004) Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation JOURNAL OF APPLIED PHYSICS 95: 10. 5696-5702 MAY 15 Abstract: Notes:
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P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, G Ben Asssayag, A Claverie, M Perego, M Fanciulli, V Soncini, R Sotgiu, A Agarwal, M Ameen, C Sohl, P Normand (2004) Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis SOLID-STATE ELECTRONICS 48: 9. 1511-1517 SEP Abstract: Notes:
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P Normand, P Dimitrakis, E Kapetanakis, D Skarlatos, K Beltsios, D Tsoukalas, C Bonafos, H Coffin, G Benassayag, A Claverie, V Soncini, A Agarwal, C Sohl, M Ameen (2004) Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications MICROELECTRONIC ENGINEERING 73-74: 730-735 JUN Abstract: Notes:
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S Kolliopoulou, P Dimitrakis, P Normand, H L Zhang, N Cant, S D Evans, S Paul, C Pearson, A Molloy, M C Petty, D Tsoukalas (2004) Integration of organic insulator and self-assembled gold nanoparticles on Si MOSFET for novel non-volatile memory cells MICROELECTRONIC ENGINEERING 73-74: 725-729 JUN Abstract: Notes:
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2003 |
P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, N Cherkashin, C Bonafos, G Benassayag, H Coffin, A Claverie, V Soncini, A Agarwal, M Ameen (2003) Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis APPLIED PHYSICS LETTERS 83: 1. 168-170 JUL 7 Abstract: Notes:
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P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, D Tsoukalas, K Beltsios, A Claverie, G Benassayag, C Bonafos, M Carrada, N Cherkashin, V Soncini, A Agarwal, C Sohl, M Ameen (2003) Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis MICROELECTRONIC ENGINEERING 67-8: 629-634 JUN Abstract: Notes:
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P Dimitrakis, E Kapetanakis, P Normand, D Skarlatos, D Tsoukalas, K Beltsios, A Claverie, G Benassayag, C Bonafos, D Chassaing, M Carrada, V Soncini (2003) MOS memory structures by very-low-energy-implanted Si in thin SiO2 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 101: 1-3. 14-18 AUG 15 Abstract: Notes:
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S Kolliopoulou, P Dimitrakis, P Normand, H L Zhang, N Cant, S D Evans, S Paul, C Pearson, A Molloy, M C Petty, D Tsoukalas (2003) Hybrid silicon-organic nanoparticle memory device JOURNAL OF APPLIED PHYSICS 94: 8. 5234-5239 OCT 15 Abstract: Notes:
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1998 |
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1996 |
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1995 |
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1993 |
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