Abstract: A novel water based precursor solution using ethylenediaminetetraacetic acid (H4EDTA) as a complexant and acetic acid and ethylenediamine (EDA) as additional components to obtain CeO2 buffer layers on Ni (5%W) tapes is described in detail. The influence of complexation behavior in the formation of transparent and homogenous sols and gels by the combination of cerium acetate, acetic acid and H4EDTA has been studied. The optimal growth conditions for cerium oxide were Ar-5% H2 gas processing atmosphere, solution concentration levels of 0.2–0.4 M, a dwell time of 60 min at 900 °C and 5–30 min at 1,050 °C. X-ray diffraction, SEM, spectroscopic ellipsometry and pole figures were used to characterize the CeO2 films. Highly textured CeO2 layers were obtained.